M29F800FT55M3E2 vs M29F800FB55M3E2 Comparison

Detailed side-by-side comparison of M29F800FT55M3E2 by Micron Technology and M29F800FB55M3E2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29F800FT55M3E2 M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 ✓ Active
Micron Technology
M29F800FB55M3E2 M29F800FB55M3E2 - 8Mbit 5V NOR Flash 55ns | Micron

M29F800FB55M3E2 - 8Mbit 5V NOR Flash 55ns | Micron

M29F800FB55M3E2 ✓ Active

Specification Comparison

Parameter M29F800FT55M3E2 M29F800FB55M3E2
Brand Micron Technology Micron Technology
Category EEPROM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.95 $3.01
Memory Type NOR Flash Parallel NOR Flash
Memory Size 8 Mbit —
Organization 512K x 16 bit 512K x 16 / 1M x 8
Interface Parallel —
Access Time 55 ns 55 ns
Supply Voltage 5 V —
Operating Temperature -40C to +125C -40C to +125C
Boot Block Location Top boot block —
Program/Erase Cycles 100,000 per block —
Program Algorithm Embedded byte/word program —
Erase Features Erase suspend and resume —
Standby Mode Automatic standby, low power —
Identification Electronic signature —
Package 44-SO (SOP) 44-pin SO (SOP)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (E suffix) Compliant (E suffix, RoHS-compliant package)
Density 8389 kbits 8 Mbit (8389 kbits)
Supply Voltage (VCC) — 5 V
Boot Block — Bottom boot block
Automotive Qualification — AEC-Q100 (Auto Grade 125C)
Program / Erase — Embedded byte/word program and erase controller
Number of Words — 512 k
Bits per Word — 16 bits
Standard Packing — Tray
Family — M29F 200/400/800 5V Parallel NOR Flash

Datasheets & Resources

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