M29F800FT55M3E2 vs M29F800FB55M3E2 对比

详细并排对比 M29F800FT55M3E2 出自 Micron Technology 和 M29F800FB55M3E2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F800FT55M3E2 M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 ✓ 量产中
Micron Technology
M29F800FB55M3E2 M29F800FB55M3E2 - 8Mbit 5V NOR Flash 55ns | Micron

M29F800FB55M3E2 - 8Mbit 5V NOR Flash 55ns | Micron

M29F800FB55M3E2 ✓ 量产中

规格对比

参数 M29F800FT55M3E2 M29F800FB55M3E2
品牌 Micron Technology Micron Technology
分类 EEPROM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.95 $3.01
存储器类型 NOR Flash Parallel NOR Flash
存储容量 8 Mbit —
存储组织 512K x 16 bit 512K x 16 / 1M x 8
接口 Parallel —
Access Time 55 ns 55 ns
电源电压 5 V —
工作温度 -40C to +125C -40C to +125C
Boot Block Location Top boot block —
Program/Erase Cycles 100,000 per block —
Program Algorithm Embedded byte/word program —
Erase Features Erase suspend and resume —
Standby Mode Automatic standby, low power —
Identification Electronic signature —
封装 44-SO (SOP) 44-pin SO (SOP)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant (E suffix) Compliant (E suffix, RoHS-compliant package)
Density 8389 kbits 8 Mbit (8389 kbits)
Supply Voltage (VCC) — 5 V
Boot Block — Bottom boot block
Automotive Qualification — AEC-Q100 (Auto Grade 125C)
Program / Erase — Embedded byte/word program and erase controller
Number of Words — 512 k
Bits per Word — 16 bits
Standard Packing — Tray
Family — M29F 200/400/800 5V Parallel NOR Flash

数据手册与资源

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