M29F800FT55N3F2 vs M29F400FT55N3F2 Comparison
Detailed side-by-side comparison of M29F800FT55N3F2 by Micron Technology and M29F400FT55N3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ ActiveSpecification Comparison
| Parameter | M29F800FT55N3F2 | M29F400FT55N3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | EEPROM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $1.51 |
| Memory Type | NOR Flash, Parallel | NOR Flash (SLC) |
| Memory Size | 8 Mbit | 4 Mbit |
| Organization | 1M x 8 bit / 512K x 16 bit | 256K x 16 |
| Supply Voltage | 5 V (single supply) | 5 V |
| Access Time | 55 ns | 55 ns |
| Interface | Parallel | Parallel |
| Boot Block Architecture | Top boot block (T) | — |
| Programming Voltage | 5.0 V VCC (no 12 V VPP required) | Single supply (no 12 V VPP required) |
| Package | 48-pin TSOP | 44-SO (SOP-44) |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: min operating temperature] |
| Erase Block Size | [DATA_NEEDED: block size] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | — |
| Active Read Current | [DATA_NEEDED: ICC read] | — |
| Block Architecture | — | Top boot block |
| Temperature Grade | — | Auto Grade 3, up to +125C (per Micron ordering code) |
| Compliance Suffix | — | F2 (RoHS-compliant, lead-free plating) |
| Technology | — | Floating-gate NOR cell, charge-pump program/erase |
| Max Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |