M29W064FT70N3F vs M29W800FT70ZA3SF Comparison

Detailed side-by-side comparison of M29W064FT70N3F by Micron Technology and M29W800FT70ZA3SF by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29W064FT70N3F M29W064FT70N3F - 64Mb 3V NOR Flash 70ns | Micron

M29W064FT70N3F - 64Mb 3V NOR Flash 70ns | Micron

M29W064FT70N3F ✓ Active
Micron Technology
M29W800FT70ZA3SF M29W800FT70ZA3SF - 8Mbit NOR Flash 70ns TFBGA48 | Micron

M29W800FT70ZA3SF - 8Mbit NOR Flash 70ns TFBGA48 | Micron

M29W800FT70ZA3SF ✓ Active

Specification Comparison

Parameter M29W064FT70N3F M29W800FT70ZA3SF
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $6.30 $2.05
Memory Type NOR Flash NOR Flash
Density 64 Mbit 8 Mbit
Organization 8 Mbit x8 / 4 Mbit x16 —
Access Time 70 ns 70 ns
Supply Voltage (VCC) up to 3.6 V for program, erase, read —
VPP Fast Program Voltage 12 V (optional) —
Interface Parallel Parallel
Boot Block Configuration Top boot block (FT) Top boot block (FT)
Operating Temperature -40C to +125C -40C to +125C
Package 48-TSOP I 48-TFBGA (6 x 8 mm)
Mounting Type Surface Mount Surface Mount
Programming Method Command set / data polling / toggle bit —
Block Protection Yes, with temporary unprotection —
Product Longevity Program No —
Width x8/x16 —
RoHS Status unknown [DATA_NEEDED: RoHS status]
Supply Voltage — 2.7 V to 3.6 V
Memory Organization — [DATA_NEEDED: memory organization x8/x16]
Program/Erase Cycles — [DATA_NEEDED: endurance cycles]
Data Retention — [DATA_NEEDED: data retention years]
Active Read Current — [DATA_NEEDED: active read current]
Standby Current — [DATA_NEEDED: standby current]
Package Body Size — 6 x 8 mm
Ball Pitch — 0.80 mm

Datasheets & Resources

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