M29W064FT70N3F vs M29W800FT70ZA3SF Vergleich
Detaillierter Direktvergleich von M29W064FT70N3F von Micron Technology und M29W800FT70ZA3SF von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W064FT70N3F | M29W800FT70ZA3SF |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $6,30 | $2,05 |
| Speichertyp | NOR Flash | NOR Flash |
| Density | 64 Mbit | 8 Mbit |
| Speicherorganisation | 8 Mbit x8 / 4 Mbit x16 | — |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | up to 3.6 V for program, erase, read | — |
| VPP Fast Program Voltage | 12 V (optional) | — |
| Schnittstelle | Parallel | Parallel |
| Boot Block Configuration | Top boot block (FT) | Top boot block (FT) |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Gehäuse | 48-TSOP I | 48-TFBGA (6 x 8 mm) |
| Montageart | Surface Mount | Surface Mount |
| Programming Method | Command set / data polling / toggle bit | — |
| Block Protection | Yes, with temporary unprotection | — |
| Product Longevity Program | No | — |
| Width | x8/x16 | — |
| RoHS-Status | unknown | [DATA_NEEDED: RoHS status] |
| Versorgungsspannung | — | 2.7 V to 3.6 V |
| Memory Organization | — | [DATA_NEEDED: memory organization x8/x16] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance cycles] |
| Data Retention | — | [DATA_NEEDED: data retention years] |
| Active Read Current | — | [DATA_NEEDED: active read current] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Package Body Size | — | 6 x 8 mm |
| Ball Pitch | — | 0.80 mm |