M29W128GH70N3E vs M29W064FT70N3E Comparison
Detailed side-by-side comparison of M29W128GH70N3E by Micron Technology and M29W064FT70N3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W128GH70N3E | M29W064FT70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.00 |
| Memory Type | NOR Flash | NOR Flash (Parallel) |
| Memory Size | 128 Mbit (16 MB) | — |
| Organization | 8M x 16 / 16M x 8 | 8 Mb x8 or 4 Mb x16 |
| Interface | Parallel (asynchronous) | Parallel, CFI compliant |
| Access Time | 70 ns | 70 ns |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Operating Temperature | -40C to +125C | -40C to +85C |
| Temperature Grade | Automotive | — |
| Package | 56-TSOP | 48-TSOP |
| Number of Terminals | 56 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Data Bus Width | 16 bit (byte/word selectable) | — |
| Memory Density | 131072 kbit | — |
| Programming | Command-sequence program/erase with status polling | — |
| Application Segment | Automotive / Industrial code storage | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | [DATA_NEEDED: program/erase endurance cycles] |
| Density | — | 64 Mbit |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Product Longevity Program | — | No |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |
| Standby Current | — | [DATA_NEEDED: standby current] |