M29W128GH70N3E vs M29W064FT70N3E Vergleich
Detaillierter Direktvergleich von M29W128GH70N3E von Micron Technology und M29W064FT70N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W128GH70N3E | M29W064FT70N3E |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $0,00 |
| Speichertyp | NOR Flash | NOR Flash (Parallel) |
| Speichergröße | 128 Mbit (16 MB) | — |
| Speicherorganisation | 8M x 16 / 16M x 8 | 8 Mb x8 or 4 Mb x16 |
| Schnittstelle | Parallel (asynchronous) | Parallel, CFI compliant |
| Access Time | 70 ns | 70 ns |
| Versorgungsspannung | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Betriebstemperatur | -40C to +125C | -40C to +85C |
| Temperature Grade | Automotive | — |
| Gehäuse | 56-TSOP | 48-TSOP |
| Number of Terminals | 56 | — |
| Montageart | Surface Mount | Surface Mount |
| Datenbusbreite | 16 bit (byte/word selectable) | — |
| Memory Density | 131072 kbit | — |
| Programming | Command-sequence program/erase with status polling | — |
| Application Segment | Automotive / Industrial code storage | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | [DATA_NEEDED: program/erase endurance cycles] |
| Density | — | 64 Mbit |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Product Longevity Program | — | No |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |
| Standby Current | — | [DATA_NEEDED: standby current] |