M29W128GH70N3E vs M29W064FT70N3E 对比
详细并排对比 M29W128GH70N3E 出自 Micron Technology 和 M29W064FT70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29W128GH70N3E | M29W064FT70N3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $0.00 |
| 存储器类型 | NOR Flash | NOR Flash (Parallel) |
| 存储容量 | 128 Mbit (16 MB) | — |
| 存储组织 | 8M x 16 / 16M x 8 | 8 Mb x8 or 4 Mb x16 |
| 接口 | Parallel (asynchronous) | Parallel, CFI compliant |
| Access Time | 70 ns | 70 ns |
| 电源电压 | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| 工作温度 | -40C to +125C | -40C to +85C |
| Temperature Grade | Automotive | — |
| 封装 | 56-TSOP | 48-TSOP |
| Number of Terminals | 56 | — |
| 安装类型 | Surface Mount | Surface Mount |
| 数据总线宽度 | 16 bit (byte/word selectable) | — |
| Memory Density | 131072 kbit | — |
| Programming | Command-sequence program/erase with status polling | — |
| Application Segment | Automotive / Industrial code storage | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | [DATA_NEEDED: program/erase endurance cycles] |
| Density | — | 64 Mbit |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Product Longevity Program | — | No |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |
| Standby Current | — | [DATA_NEEDED: standby current] |