M29W400FB55N3E vs M29W400FB55N3F Comparison

Detailed side-by-side comparison of M29W400FB55N3E by Micron Technology and M29W400FB55N3F by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29W400FB55N3E M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E ✓ Active
Micron Technology
M29W400FB55N3F M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F ✓ Active

Specification Comparison

Parameter M29W400FB55N3E M29W400FB55N3F
Brand Micron Technology Micron Technology
Category EEPROM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $2.55
Memory Type NOR Flash (parallel) NOR Flash
Density 4 Mbit (4194 kbits) —
Organization 512K x 8 bit / 256K x 16 bit 512K x8 / 256K x16
Access Time 55 ns 55 ns
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V
Interface Parallel, 8-bit/16-bit (BYTE# selectable) Parallel (asynchronous)
Block Architecture 19 memory blocks, 1 boot block (bottom, FB) Boot block with hardware sector protection
Programming Time 10 us per byte/word typical —
Boot Block Hardware Protection Yes —
Operating Temperature -40C to +125C [DATA_NEEDED: operating temperature range]
Package 48-TSOP I, 12 x 20 mm 48-pin TSOP I (12 x 20 mm)
Pins 48 —
Mounting Type Surface Mount Surface Mount
Packaging Tray Tape & Reel (TR)
RoHS Status Compliant —
Speed Grades in Family 55 ns, 70 ns —
Memory Size — 4 Mbit
Program/Erase Supply — Single 2.7 V to 3.6 V
Byte/Word Select — BYTE# pin
Program Suspend/Erase Suspend — Supported
Lead-Free / RoHS — Yes (F suffix = lead-free RoHS-compliant)
Endurance — [DATA_NEEDED: program/erase cycles per block]
Data Retention — [DATA_NEEDED: retention years]

Datasheets & Resources

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