M29W400FB55N3E vs M29W400FB55N3F Comparación
Comparación detallada lado a lado de M29W400FB55N3E por Micron Technology y M29W400FB55N3F por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology
M29W400FB55N3E ✓ ActivoComparación de especificaciones
| Parámetro | M29W400FB55N3E | M29W400FB55N3F |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | EEPROM | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $2,55 |
| Tipo de memoria | NOR Flash (parallel) | NOR Flash |
| Density | 4 Mbit (4194 kbits) | — |
| Organización de memoria | 512K x 8 bit / 256K x 16 bit | 512K x8 / 256K x16 |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Interfaz | Parallel, 8-bit/16-bit (BYTE# selectable) | Parallel (asynchronous) |
| Block Architecture | 19 memory blocks, 1 boot block (bottom, FB) | Boot block with hardware sector protection |
| Programming Time | 10 us per byte/word typical | — |
| Boot Block Hardware Protection | Yes | — |
| Temperatura de funcionamiento | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Encapsulado | 48-TSOP I, 12 x 20 mm | 48-pin TSOP I (12 x 20 mm) |
| Pins | 48 | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packaging | Tray | Tape & Reel (TR) |
| Estado RoHS | Compliant | — |
| Speed Grades in Family | 55 ns, 70 ns | — |
| Tamaño de memoria | — | 4 Mbit |
| Program/Erase Supply | — | Single 2.7 V to 3.6 V |
| Byte/Word Select | — | BYTE# pin |
| Program Suspend/Erase Suspend | — | Supported |
| Lead-Free / RoHS | — | Yes (F suffix = lead-free RoHS-compliant) |
| Endurance | — | [DATA_NEEDED: program/erase cycles per block] |
| Data Retention | — | [DATA_NEEDED: retention years] |