M29W400FB55N3E vs M29W400FB55N3F 对比

详细并排对比 M29W400FB55N3E 出自 Micron Technology 和 M29W400FB55N3F 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W400FB55N3E M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E ✓ 量产中
Micron Technology
M29W400FB55N3F M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F ✓ 量产中

规格对比

参数 M29W400FB55N3E M29W400FB55N3F
品牌 Micron Technology Micron Technology
分类 EEPROM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $2.55
存储器类型 NOR Flash (parallel) NOR Flash
Density 4 Mbit (4194 kbits) —
存储组织 512K x 8 bit / 256K x 16 bit 512K x8 / 256K x16
Access Time 55 ns 55 ns
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V
接口 Parallel, 8-bit/16-bit (BYTE# selectable) Parallel (asynchronous)
Block Architecture 19 memory blocks, 1 boot block (bottom, FB) Boot block with hardware sector protection
Programming Time 10 us per byte/word typical —
Boot Block Hardware Protection Yes —
工作温度 -40C to +125C [DATA_NEEDED: operating temperature range]
封装 48-TSOP I, 12 x 20 mm 48-pin TSOP I (12 x 20 mm)
Pins 48 —
安装类型 Surface Mount Surface Mount
Packaging Tray Tape & Reel (TR)
RoHS 状态 Compliant —
Speed Grades in Family 55 ns, 70 ns —
存储容量 — 4 Mbit
Program/Erase Supply — Single 2.7 V to 3.6 V
Byte/Word Select — BYTE# pin
Program Suspend/Erase Suspend — Supported
Lead-Free / RoHS — Yes (F suffix = lead-free RoHS-compliant)
Endurance — [DATA_NEEDED: program/erase cycles per block]
Data Retention — [DATA_NEEDED: retention years]

数据手册与资源

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