M29W400FT55N3E vs M29W320DB70N3E Comparison

Detailed side-by-side comparison of M29W400FT55N3E by Micron Technology and M29W320DB70N3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29W400FT55N3E M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E ✓ Active
Micron Technology
M29W320DB70N3E M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E ✓ Active

Specification Comparison

Parameter M29W400FT55N3E M29W320DB70N3E
Brand Micron Technology Micron Technology
Category Memory ICs Flash
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.80 $1.95
Memory Type Flash - NOR Memory IC NOR Flash
Memory Size 4 Mbit —
Interface Parallel Parallel
Access Time 55 ns 70 ns
Supply Voltage (VCC) 2.7 V to 3.6 V (program, erase and read) 2.7 V to 3.6 V
Sector Size 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block) —
Boot Block Position Top (FT suffix) —
Operating Temperature -40C to +125C -40C to +125C
Temperature Grade Automotive —
Package 48-TSOP I 48-TSOP I
Number of Terminals 48 —
Package Code / Shape TSSOP / Rectangular —
Mounting Type Surface Mount Surface Mount
Moisture Sensitivity Level (MSL) 3 (168 Hours) —
Packaging Tray —
Peak Reflow Time 30 s max —
Companion Access-Time Grade 55 ns and 70 ns versions available in family —
Density — 32 Mbit (33554 kbits)
Organization — 2M x 16
Number of Words — 2000 k
Bits per Word — 16 bits
VPP Fast Program Voltage — 12 V (optional)
Block Architecture — Non-uniform parameter blocks, boot block (bottom boot, DB type)
RoHS Status — ROHS3 Compliant
Programming Mode — Single VCC program/erase; automatic program/erase with status polling
Power-Up Mode — Read mode (default)

Datasheets & Resources

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