M321R4GA3EB0-CWM vs M321R4GA3EB2-CWM Comparison
Detailed side-by-side comparison of M321R4GA3EB0-CWM by Samsung Electronics and M321R4GA3EB2-CWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M321R4GA3EB0-CWM | M321R4GA3EB2-CWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | EEPROM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1,489.00 | $1,260.00 |
| Capacity | 32 GB | — |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM ECC Registered (RDIMM) |
| Form Factor | 288-pin DIMM | 288-pin RDIMM |
| Module Type | ECC Registered DIMM (RDIMM) | — |
| Data Rate | 5600 MT/s (PC5-44800) | 5600 MT/s (PC5-44800) |
| CAS Latency | CL46 | CL46 |
| Operating Voltage | 1.1 V | 1.1 V |
| Rank Configuration | 2Rx8 (Dual Rank) | — |
| Organization | 4Gx72 | 2Rx8 (dual rank, x8) |
| DRAM Composition | 20 x FBGA 2Gx8 DDR5 DRAM | 20 x 2Gx8 FBGA DRAM components |
| ECC | Yes (Registered with ECC) | — |
| Configuration | 1 x 32 GB | — |
| Bandwidth Class | PC5-44800 (44800 MB/s) | — |
| Application Segment | Server / Datacenter | — |
| Brand | Samsung Electronics | — |
| GTIN / EAN | 5715328154490 | — |
| Memory Capacity | — | 32 GB |
| Ranks | — | 2 |
| Error Correction | — | On-die ECC (ODECC) + registered parity/CRC |
| DRAM Die | — | E-die (12nm-class process) |
| JEDEC Compliance | — | JEDEC PC5-44800R compliant |
| Module Supply | — | 12 V input with on-module PMIC (1.1 V DRAM rail) |
| Compatible Platforms | — | Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro DDR5 servers |
| RoHS Status | — | Compliant |
| Operating Temperature | — | [DATA_NEEDED: operating temperature range] |
| Peak Bandwidth | — | Approx. 44.8 GB/s per module |