M58BW16FB4ZA3F vs M58BW32FB5ZA3T Comparison
Detailed side-by-side comparison of M58BW16FB4ZA3F by Micron Technology and M58BW32FB5ZA3T by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M58BW16FB4ZA3F | M58BW32FB5ZA3T |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.48 | $4.88 |
| Memory Type | NOR Flash, parallel burst | FLASH - NOR Memory IC |
| Memory Size | 16 Mbit (1M x16 / 512K x32) | 32 Mbit |
| Access Time | 45 ns | 55 ns |
| Supply Voltage | 3.3 V nominal | 3.3 V (single supply) |
| Interface | Parallel, synchronous burst | Parallel |
| Organization | 1M words x16, boot block | x32 (Boot Block, Burst) |
| Package | 80-LBGA (10 x 12 mm) | 80-LBGA (10 x 12 mm) |
| Number of Terminals | 80 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -40C to +125C (automotive grade) | [DATA_NEEDED: operating temperature range] |
| Application Grade | Automotive | — |
| Technology | Boot Block NOR Flash | — |
| Read Mode | Asynchronous and synchronous burst read | — |
| RoHS Status | Compliant (3F lead-free suffix) | [DATA_NEEDED: RoHS status] |
| Lifecycle | Active / legacy parallel NOR | — |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: data retention] |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: endurance cycles] |
| Burst Mode | — | Yes (synchronous burst read) |
| Block Architecture | — | Boot Block |
| Active Read Current | — | [DATA_NEEDED: active current] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Packaging | — | Tape & Reel (TR suffix) |