M58BW16FB4ZA3F vs M58BW32FB5ZA3T 对比
详细并排对比 M58BW16FB4ZA3F 出自 Micron Technology 和 M58BW32FB5ZA3T 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M58BW16FB4ZA3F | M58BW32FB5ZA3T |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.48 | $4.88 |
| 存储器类型 | NOR Flash, parallel burst | FLASH - NOR Memory IC |
| 存储容量 | 16 Mbit (1M x16 / 512K x32) | 32 Mbit |
| Access Time | 45 ns | 55 ns |
| 电源电压 | 3.3 V nominal | 3.3 V (single supply) |
| 接口 | Parallel, synchronous burst | Parallel |
| 存储组织 | 1M words x16, boot block | x32 (Boot Block, Burst) |
| 封装 | 80-LBGA (10 x 12 mm) | 80-LBGA (10 x 12 mm) |
| Number of Terminals | 80 | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -40C to +125C (automotive grade) | [DATA_NEEDED: operating temperature range] |
| Application Grade | Automotive | — |
| Technology | Boot Block NOR Flash | — |
| Read Mode | Asynchronous and synchronous burst read | — |
| RoHS 状态 | Compliant (3F lead-free suffix) | [DATA_NEEDED: RoHS status] |
| Lifecycle | Active / legacy parallel NOR | — |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: data retention] |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: endurance cycles] |
| Burst Mode | — | Yes (synchronous burst read) |
| Block Architecture | — | Boot Block |
| Active Read Current | — | [DATA_NEEDED: active current] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Packaging | — | Tape & Reel (TR suffix) |