M58BW16FB4ZA3F vs M58BW32FB5ZA3T Vergleich
Detaillierter Direktvergleich von M58BW16FB4ZA3F von Micron Technology und M58BW32FB5ZA3T von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M58BW16FB4ZA3F | M58BW32FB5ZA3T |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,48 | $4,88 |
| Speichertyp | NOR Flash, parallel burst | FLASH - NOR Memory IC |
| Speichergröße | 16 Mbit (1M x16 / 512K x32) | 32 Mbit |
| Access Time | 45 ns | 55 ns |
| Versorgungsspannung | 3.3 V nominal | 3.3 V (single supply) |
| Schnittstelle | Parallel, synchronous burst | Parallel |
| Speicherorganisation | 1M words x16, boot block | x32 (Boot Block, Burst) |
| Gehäuse | 80-LBGA (10 x 12 mm) | 80-LBGA (10 x 12 mm) |
| Number of Terminals | 80 | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40C to +125C (automotive grade) | [DATA_NEEDED: operating temperature range] |
| Application Grade | Automotive | — |
| Technology | Boot Block NOR Flash | — |
| Read Mode | Asynchronous and synchronous burst read | — |
| RoHS-Status | Compliant (3F lead-free suffix) | [DATA_NEEDED: RoHS status] |
| Lifecycle | Active / legacy parallel NOR | — |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: data retention] |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: endurance cycles] |
| Burst Mode | — | Yes (synchronous burst read) |
| Block Architecture | — | Boot Block |
| Active Read Current | — | [DATA_NEEDED: active current] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Packaging | — | Tape & Reel (TR suffix) |