MD7P19130HSR5 vs MD7P19130HSR3 Comparison

Detailed side-by-side comparison of MD7P19130HSR5 by NXP Semiconductors and MD7P19130HSR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MD7P19130HSR5 MD7P19130HSR5 - 40W RF Power LDMOS, 1.93-1.99 GHz | NXP

MD7P19130HSR5 - 40W RF Power LDMOS, 1.93-1.99 GHz | NXP

MD7P19130HSR5 ✓ Active
NXP Semiconductors
MD7P19130HSR3 MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 ✓ Active

Specification Comparison

Parameter MD7P19130HSR5 MD7P19130HSR3
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $58.10 $65.10
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Number MD7P19130HSR5 —
Transistor Type LDMOS (Dual), N-Channel LDMOS (Dual), Lateral N-Channel RF Power MOSFET
Technology RF Power LDMOS NXP HV7 LDMOS
Drain-Source Voltage (VDS) 28 V (typical operating), 65 V (rated) —
Drain Current (Continuous) 1.25 A —
Output Power (Pout) 40 W (minimum, CW) 40 W average (W-CDMA, single-carrier)
Power Gain (Gp) 20 dB (typical at 1.99 GHz) —
Operating Frequency 1.93 GHz to 1.99 GHz —
Frequency Band DCS1800 / PCS1900 / UMTS / LTE Band 1/2/3 —
Package / Case NI-780HS-4L (NI780HS-4 ceramic, flange mount) NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged
Mounting Type Chassis / Flange Mount (through-hole flange) Chassis-mount (bolt-down) with ceramic lid
Weight 6.47 g —
RoHS Status Compliant Compliant
Test Conditions VDS = 28 V, IDQ set per datasheet, f = 1.99 GHz, CW —
Drain-Source Voltage (VDS) Rated — 65 V
Operating Drain Voltage (VDD) — 28 V (typical)
Frequency Range — 1930 MHz to 1990 MHz
Power Gain — 20 dB typical at 1987.5 MHz
Drain Efficiency — 30% typical at 40 W, 1987.5 MHz
Quiescent Drain Current (IDQ) — 1250 mA
ACPR (5 MHz offset, 3.84 MHz channel) — -36 dBc typical
Input Signal PAR — 7.5 dB @ 0.01% probability on CCDF
Device Output Signal PAR — 6 dB @ 0.01% probability on CCDF
Operating Mode — Single-carrier W-CDMA, Class AB

Datasheets & Resources

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