MD7P19130HSR5 vs MD7P19130HSR3 Vergleich

Detaillierter Direktvergleich von MD7P19130HSR5 von NXP Semiconductors und MD7P19130HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MD7P19130HSR5 MD7P19130HSR5 - 40W RF Power LDMOS, 1.93-1.99 GHz | NXP

MD7P19130HSR5 - 40W RF Power LDMOS, 1.93-1.99 GHz | NXP

MD7P19130HSR5 ✓ Aktiv
NXP Semiconductors
MD7P19130HSR3 MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 ✓ Aktiv

Spezifikationsvergleich

Parameter MD7P19130HSR5 MD7P19130HSR3
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $58,10 $65,10
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Number MD7P19130HSR5 —
Transistortyp LDMOS (Dual), N-Channel LDMOS (Dual), Lateral N-Channel RF Power MOSFET
Technology RF Power LDMOS NXP HV7 LDMOS
Drain-Source Voltage (VDS) 28 V (typical operating), 65 V (rated) —
Drain Current (Continuous) 1.25 A —
Output Power (Pout) 40 W (minimum, CW) 40 W average (W-CDMA, single-carrier)
Power Gain (Gp) 20 dB (typical at 1.99 GHz) —
Operating Frequency 1.93 GHz to 1.99 GHz —
Frequency Band DCS1800 / PCS1900 / UMTS / LTE Band 1/2/3 —
Gehäuse / Bauform NI-780HS-4L (NI780HS-4 ceramic, flange mount) NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged
Montageart Chassis / Flange Mount (through-hole flange) Chassis-mount (bolt-down) with ceramic lid
Weight 6.47 g —
RoHS-Status Compliant Compliant
Test Conditions VDS = 28 V, IDQ set per datasheet, f = 1.99 GHz, CW —
Drain-Source Voltage (VDS) Rated — 65 V
Operating Drain Voltage (VDD) — 28 V (typical)
Frequency Range — 1930 MHz to 1990 MHz
Power Gain — 20 dB typical at 1987.5 MHz
Drain Efficiency — 30% typical at 40 W, 1987.5 MHz
Quiescent Drain Current (IDQ) — 1250 mA
ACPR (5 MHz offset, 3.84 MHz channel) — -36 dBc typical
Input Signal PAR — 7.5 dB @ 0.01% probability on CCDF
Device Output Signal PAR — 6 dB @ 0.01% probability on CCDF
Operating Mode — Single-carrier W-CDMA, Class AB

Datenblätter & Ressourcen

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