MD7P19130HSR5 vs MD7P19130HSR3 Comparaison
Comparaison détaillée côte à côte de MD7P19130HSR5 par NXP Semiconductors et MD7P19130HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MD7P19130HSR5 | MD7P19130HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $58,10 | $65,10 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MD7P19130HSR5 | — |
| Type de transistor | LDMOS (Dual), N-Channel | LDMOS (Dual), Lateral N-Channel RF Power MOSFET |
| Technology | RF Power LDMOS | NXP HV7 LDMOS |
| Drain-Source Voltage (VDS) | 28 V (typical operating), 65 V (rated) | — |
| Drain Current (Continuous) | 1.25 A | — |
| Output Power (Pout) | 40 W (minimum, CW) | 40 W average (W-CDMA, single-carrier) |
| Power Gain (Gp) | 20 dB (typical at 1.99 GHz) | — |
| Operating Frequency | 1.93 GHz to 1.99 GHz | — |
| Frequency Band | DCS1800 / PCS1900 / UMTS / LTE Band 1/2/3 | — |
| Boîtier / Format | NI-780HS-4L (NI780HS-4 ceramic, flange mount) | NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged |
| Type de montage | Chassis / Flange Mount (through-hole flange) | Chassis-mount (bolt-down) with ceramic lid |
| Weight | 6.47 g | — |
| Statut RoHS | Compliant | Compliant |
| Test Conditions | VDS = 28 V, IDQ set per datasheet, f = 1.99 GHz, CW | — |
| Drain-Source Voltage (VDS) Rated | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Power Gain | — | 20 dB typical at 1987.5 MHz |
| Drain Efficiency | — | 30% typical at 40 W, 1987.5 MHz |
| Quiescent Drain Current (IDQ) | — | 1250 mA |
| ACPR (5 MHz offset, 3.84 MHz channel) | — | -36 dBc typical |
| Input Signal PAR | — | 7.5 dB @ 0.01% probability on CCDF |
| Device Output Signal PAR | — | 6 dB @ 0.01% probability on CCDF |
| Operating Mode | — | Single-carrier W-CDMA, Class AB |