MD7P19130HSR5 vs MD7P19130HSR3 Comparação

Comparação detalhada lado a lado de MD7P19130HSR5 por NXP Semiconductors e MD7P19130HSR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MD7P19130HSR5 MD7P19130HSR5 - 40W RF Power LDMOS, 1.93-1.99 GHz | NXP

MD7P19130HSR5 - 40W RF Power LDMOS, 1.93-1.99 GHz | NXP

MD7P19130HSR5 ✓ Ativo
NXP Semiconductors
MD7P19130HSR3 MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 ✓ Ativo

Comparação de especificações

Parâmetro MD7P19130HSR5 MD7P19130HSR3
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $58,10 $65,10
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Number MD7P19130HSR5 —
Tipo de transistor LDMOS (Dual), N-Channel LDMOS (Dual), Lateral N-Channel RF Power MOSFET
Technology RF Power LDMOS NXP HV7 LDMOS
Drain-Source Voltage (VDS) 28 V (typical operating), 65 V (rated) —
Drain Current (Continuous) 1.25 A —
Output Power (Pout) 40 W (minimum, CW) 40 W average (W-CDMA, single-carrier)
Power Gain (Gp) 20 dB (typical at 1.99 GHz) —
Operating Frequency 1.93 GHz to 1.99 GHz —
Frequency Band DCS1800 / PCS1900 / UMTS / LTE Band 1/2/3 —
Encapsulamento / Caixa NI-780HS-4L (NI780HS-4 ceramic, flange mount) NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged
Tipo de montagem Chassis / Flange Mount (through-hole flange) Chassis-mount (bolt-down) with ceramic lid
Weight 6.47 g —
Status RoHS Compliant Compliant
Test Conditions VDS = 28 V, IDQ set per datasheet, f = 1.99 GHz, CW —
Drain-Source Voltage (VDS) Rated — 65 V
Operating Drain Voltage (VDD) — 28 V (typical)
Frequency Range — 1930 MHz to 1990 MHz
Power Gain — 20 dB typical at 1987.5 MHz
Drain Efficiency — 30% typical at 40 W, 1987.5 MHz
Quiescent Drain Current (IDQ) — 1250 mA
ACPR (5 MHz offset, 3.84 MHz channel) — -36 dBc typical
Input Signal PAR — 7.5 dB @ 0.01% probability on CCDF
Device Output Signal PAR — 6 dB @ 0.01% probability on CCDF
Operating Mode — Single-carrier W-CDMA, Class AB

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