MJ3055 vs MJ2955 Comparison

Detailed side-by-side comparison of MJ3055 by Seme LAB and MJ2955 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter MJ3055 MJ2955
Brand Seme LAB onsemi
Category Transistors Transistors
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $1.40
Polarity NPN PNP (complement of 2N3055)
Collector-Emitter Breakdown Voltage (VCEO) 60 V —
Maximum Collector Current (IC) 10 A —
Package TO-3 (hermetically sealed metal can) TO-3 (TO-204-3) metal case
Technology Bipolar (BJT), silicon NPN —
Power Dissipation [DATA_NEEDED: power dissipation PD] —
DC Current Gain (hFE) [DATA_NEEDED: hFE range] 20 to 70 (at IC = 4 A, VCE = 4 V)
Transition Frequency (ft) [DATA_NEEDED: fT] 4 MHz
Collector-Emitter Saturation Voltage [DATA_NEEDED: VCE(sat)] —
Mounting Type Through Hole Chassis / Through-hole bolt-down
Hermetic Sealing Yes (metal can) —
Screening Options BS, CECC, JAN, JANTX, JANTXV, JANS (per Seme LAB) —
Operating Temperature [DATA_NEEDED: operating temperature range] —
Complementary PNP Type MJ2955 —
Typical Applications General-purpose amplifier and switching —
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Transistor Type — PNP
Collector-Emitter Voltage (Vceo) — 60 V
Collector-Base Voltage (Vcbo) — 60 V
Emitter-Base Voltage (Vebo) — 7 V
Continuous Collector Current (IC) — 15 A
Continuous Base Current (IB) — 7 A
Power Dissipation (PD) — 115 W at 25 °C case
Junction-to-Case Thermal Resistance (θJC) — 1.52 °C/W
Collector-Emitter Saturation Voltage (Vce(sat)) — 1.1 V typical (at IC = 15 A)
Operating Junction Temperature — -65 °C to +200 °C

Datasheets & Resources

Browse All Products Create BOM Request Quote