MJ3055 vs MJ2955 Vergleich
Detaillierter Direktvergleich von MJ3055 von Seme LAB und MJ2955 von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MJ3055 | MJ2955 |
|---|---|---|
| Marke | Seme LAB | onsemi |
| Kategorie | Transistors | Transistors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,49 | $1,40 |
| Polarity | NPN | PNP (complement of 2N3055) |
| Collector-Emitter Breakdown Voltage (VCEO) | 60 V | — |
| Maximum Collector Current (IC) | 10 A | — |
| Gehäuse | TO-3 (hermetically sealed metal can) | TO-3 (TO-204-3) metal case |
| Technology | Bipolar (BJT), silicon NPN | — |
| Power Dissipation | [DATA_NEEDED: power dissipation PD] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE range] | 20 to 70 (at IC = 4 A, VCE = 4 V) |
| Übergangsfrequenz (ft) | [DATA_NEEDED: fT] | 4 MHz |
| Collector-Emitter Saturation Voltage | [DATA_NEEDED: VCE(sat)] | — |
| Montageart | Through Hole | Chassis / Through-hole bolt-down |
| Hermetic Sealing | Yes (metal can) | — |
| Screening Options | BS, CECC, JAN, JANTX, JANTXV, JANS (per Seme LAB) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| Complementary PNP Type | MJ2955 | — |
| Typical Applications | General-purpose amplifier and switching | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| Transistortyp | — | PNP |
| Kollektor-Emitter-Spannung (Vceo) | — | 60 V |
| Kollektor-Basis-Spannung (Vcbo) | — | 60 V |
| Emitter-Basis-Spannung (Vebo) | — | 7 V |
| Continuous Collector Current (IC) | — | 15 A |
| Continuous Base Current (IB) | — | 7 A |
| Power Dissipation (PD) | — | 115 W at 25 °C case |
| Junction-to-Case Thermal Resistance (θJC) | — | 1.52 °C/W |
| Kollektor-Emitter-Sättigungsspannung (Vce(sat)) | — | 1.1 V typical (at IC = 15 A) |
| Betriebs-Sperrschichttemperatur | — | -65 °C to +200 °C |