MMA1250EGR2 vs MMA1260EGR2 Comparison

Detailed side-by-side comparison of MMA1250EGR2 by NXP Semiconductors and MMA1260EGR2 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MMA1250EGR2 MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP

MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP

MMA1250EGR2 ⚠ Last Time Buy

Specification Comparison

Parameter MMA1250EGR2 MMA1260EGR2
Brand NXP Semiconductors NXP Semiconductors
Category Motion Sensors Motion Sensors
Lifecycle Status Last Time Buy NRND
Stock Status In Stock In Stock
Unit Price (USD) $2.85 $5.20
Sensor Type Accelerometer Accelerometer
Axis Z (perpendicular to package top) —
Full-Scale Range ±5 g —
Output Type Analog, ratiometric Analog voltage (ratiometric)
Bandwidth 50 Hz (internal 2-pole low-pass filter) 50 Hz (2-pole low-pass filter)
Sensitivity [DATA_NEEDED: sensitivity in mV/g] 1140 mV/g to 1260 mV/g
Zero-g Output Approximately Vdd/2 (ratiometric) —
Supply Voltage 5.0 V nominal (per legacy MMA1250 datasheet typical conditions) 5.0 V (nominal)
Supply Current [DATA_NEEDED: quiescent current in mA] [DATA_NEEDED: typical supply current]
Operating Temperature -40 C to +85 C (industrial grade) [DATA_NEEDED: operating temperature range]
Package 16-SOIC (SOP-16), surface mount 16-pin SOIC (SOG)
Mounting Type Surface Mount Surface Mount
Sensor Technology Micromachined silicon capacitive —
Internal Features Signal conditioning, 2-pole low-pass filter, temperature compensation, self-test —
RoHS Status [DATA_NEEDED: confirm per NXP product page] Compliant (per distributor listings)
Sensing Axis — Z
Acceleration Range — ±1.55 g
Output at 0 g — 2.5 V (nominal, ratiometric)
Self-Test — Yes (electrostatic force activation)
Zero-g Offset Drift — [DATA_NEEDED: zero-g offset over temperature]

Datasheets & Resources

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