MMA1250EGR2 vs MMA1260EGR2 Comparação
Comparação detalhada lado a lado de MMA1250EGR2 por NXP Semiconductors e MMA1260EGR2 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
NXP Semiconductors
MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP
MMA1250EGR2 ⚠ Última compraComparação de especificações
| Parâmetro | MMA1250EGR2 | MMA1260EGR2 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | Motion Sensors | Motion Sensors |
| Status do ciclo de vida | Última compra | NRND |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $2,85 | $5,20 |
| Tipo de sensor | Accelerometer | Accelerometer |
| Axis | Z (perpendicular to package top) | — |
| Full-Scale Range | ±5 g | — |
| Tipo de saída | Analog, ratiometric | Analog voltage (ratiometric) |
| Bandwidth | 50 Hz (internal 2-pole low-pass filter) | 50 Hz (2-pole low-pass filter) |
| Sensitivity | [DATA_NEEDED: sensitivity in mV/g] | 1140 mV/g to 1260 mV/g |
| Zero-g Output | Approximately Vdd/2 (ratiometric) | — |
| Tensão de alimentação | 5.0 V nominal (per legacy MMA1250 datasheet typical conditions) | 5.0 V (nominal) |
| Corrente de alimentação | [DATA_NEEDED: quiescent current in mA] | [DATA_NEEDED: typical supply current] |
| Temperatura de operação | -40 C to +85 C (industrial grade) | [DATA_NEEDED: operating temperature range] |
| Encapsulamento | 16-SOIC (SOP-16), surface mount | 16-pin SOIC (SOG) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Sensor Technology | Micromachined silicon capacitive | — |
| Internal Features | Signal conditioning, 2-pole low-pass filter, temperature compensation, self-test | — |
| Status RoHS | [DATA_NEEDED: confirm per NXP product page] | Compliant (per distributor listings) |
| Sensing Axis | — | Z |
| Acceleration Range | — | ±1.55 g |
| Output at 0 g | — | 2.5 V (nominal, ratiometric) |
| Self-Test | — | Yes (electrostatic force activation) |
| Zero-g Offset Drift | — | [DATA_NEEDED: zero-g offset over temperature] |