MMA1250EGR2 vs MMA1260EGR2 Comparaison
Comparaison détaillée côte à côte de MMA1250EGR2 par NXP Semiconductors et MMA1260EGR2 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP
MMA1250EGR2 ⚠ Dernier achatComparaison des spécifications
| Paramètre | MMA1250EGR2 | MMA1260EGR2 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Motion Sensors | Motion Sensors |
| Statut du cycle de vie | Dernier achat | NRND |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,85 | $5,20 |
| Type de capteur | Accelerometer | Accelerometer |
| Axis | Z (perpendicular to package top) | — |
| Full-Scale Range | ±5 g | — |
| Type de sortie | Analog, ratiometric | Analog voltage (ratiometric) |
| Bandwidth | 50 Hz (internal 2-pole low-pass filter) | 50 Hz (2-pole low-pass filter) |
| Sensitivity | [DATA_NEEDED: sensitivity in mV/g] | 1140 mV/g to 1260 mV/g |
| Zero-g Output | Approximately Vdd/2 (ratiometric) | — |
| Tension d'alimentation | 5.0 V nominal (per legacy MMA1250 datasheet typical conditions) | 5.0 V (nominal) |
| Courant d'alimentation | [DATA_NEEDED: quiescent current in mA] | [DATA_NEEDED: typical supply current] |
| Température de fonctionnement | -40 C to +85 C (industrial grade) | [DATA_NEEDED: operating temperature range] |
| Boîtier | 16-SOIC (SOP-16), surface mount | 16-pin SOIC (SOG) |
| Type de montage | Surface Mount | Surface Mount |
| Sensor Technology | Micromachined silicon capacitive | — |
| Internal Features | Signal conditioning, 2-pole low-pass filter, temperature compensation, self-test | — |
| Statut RoHS | [DATA_NEEDED: confirm per NXP product page] | Compliant (per distributor listings) |
| Sensing Axis | — | Z |
| Acceleration Range | — | ±1.55 g |
| Output at 0 g | — | 2.5 V (nominal, ratiometric) |
| Self-Test | — | Yes (electrostatic force activation) |
| Zero-g Offset Drift | — | [DATA_NEEDED: zero-g offset over temperature] |