MMA1250EGR2 vs MMA1260EGR2 对比

详细并排对比 MMA1250EGR2 出自 NXP Semiconductors 和 MMA1260EGR2 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MMA1250EGR2 MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP

MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP

MMA1250EGR2 ⚠ 最后一次采购

规格对比

参数 MMA1250EGR2 MMA1260EGR2
品牌 NXP Semiconductors NXP Semiconductors
分类 Motion Sensors Motion Sensors
生命周期状态 最后采购期 不推荐新设计
库存状态 有库存 有库存
单价(USD) $2.85 $5.20
传感器类型 Accelerometer Accelerometer
Axis Z (perpendicular to package top) —
Full-Scale Range ±5 g —
输出类型 Analog, ratiometric Analog voltage (ratiometric)
Bandwidth 50 Hz (internal 2-pole low-pass filter) 50 Hz (2-pole low-pass filter)
Sensitivity [DATA_NEEDED: sensitivity in mV/g] 1140 mV/g to 1260 mV/g
Zero-g Output Approximately Vdd/2 (ratiometric) —
电源电压 5.0 V nominal (per legacy MMA1250 datasheet typical conditions) 5.0 V (nominal)
电源电流 [DATA_NEEDED: quiescent current in mA] [DATA_NEEDED: typical supply current]
工作温度 -40 C to +85 C (industrial grade) [DATA_NEEDED: operating temperature range]
封装 16-SOIC (SOP-16), surface mount 16-pin SOIC (SOG)
安装类型 Surface Mount Surface Mount
Sensor Technology Micromachined silicon capacitive —
Internal Features Signal conditioning, 2-pole low-pass filter, temperature compensation, self-test —
RoHS 状态 [DATA_NEEDED: confirm per NXP product page] Compliant (per distributor listings)
Sensing Axis — Z
Acceleration Range — ±1.55 g
Output at 0 g — 2.5 V (nominal, ratiometric)
Self-Test — Yes (electrostatic force activation)
Zero-g Offset Drift — [DATA_NEEDED: zero-g offset over temperature]

数据手册与资源

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