MMA20312BT1 vs MMA25312BT1 Comparison

Detailed side-by-side comparison of MMA20312BT1 by NXP Semiconductors and MMA25312BT1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MMA25312BT1 MMA25312BT1 - 2.3-2.7 GHz 26 dB InGaP HBT Driver Amplifier | NXP

MMA25312BT1 - 2.3-2.7 GHz 26 dB InGaP HBT Driver Amplifier | NXP

MMA25312BT1 ✓ Active

Specification Comparison

Parameter MMA20312BT1 MMA25312BT1
Brand NXP Semiconductors NXP Semiconductors
Category RF Amplifiers RF Amplifiers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.85 $3.65
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Product Type RF Linear Power Amplifier —
Technology InGaP HBT (Heterojunction Bipolar Transistor) InGaP HBT (Heterojunction Bipolar Transistor)
Topology 2-stage Class AB cascade 2-stage linear driver amplifier
Frequency Range 1800 MHz to 2200 MHz 2300 MHz to 2700 MHz
Small-Signal Gain 27.2 dB 26 dB
Saturated Output Power (Psat) 30.5 dBm (~1.1 W) —
Supply Voltage 5 V 3 V to 5 V
Supply Current (Idq) 70 mA typical —
Package / Case 12-QFN (3x3 mm) with Exposed Pad —
Mounting Type Surface Mount Surface Mount
RF Input/Output Match Internal 50 ohm —
Supported RF Standards LTE, PCS, TD-SCDMA, UMTS —
Operating Temperature [DATA_NEEDED: operating temperature range] -40 °C to +85 °C
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
RoHS Status Compliant (per NXP product page) Compliant
Lead-Free Yes —
Packaging Tape & Reel —
Saturated Output Power — 31 dBm (typ)
Noise Figure — 3.8 dB at 2.5 GHz
Supply Current — 124 mA (typ)
Test Frequency — 2.5 GHz
Package — 12-VFQFN Exposed Pad (QFN-12 EP)
RF Type — WiMAX, WLAN

Datasheets & Resources

Browse All Products Create BOM Request Quote