MMA20312BT1 vs MMA25312BT1 Vergleich
Detaillierter Direktvergleich von MMA20312BT1 von NXP Semiconductors und MMA25312BT1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MMA20312BT1 - 2-Stage InGaP HBT Linear Amplifier, 1.8-2.2 GHz | NXP
MMA20312BT1 ✓ AktivNXP Semiconductors
MMA25312BT1 - 2.3-2.7 GHz 26 dB InGaP HBT Driver Amplifier | NXP
MMA25312BT1 ✓ AktivSpezifikationsvergleich
| Parameter | MMA20312BT1 | MMA25312BT1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | RF Amplifiers | RF Amplifiers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,85 | $3,65 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Product Type | RF Linear Power Amplifier | — |
| Technology | InGaP HBT (Heterojunction Bipolar Transistor) | InGaP HBT (Heterojunction Bipolar Transistor) |
| Topologie | 2-stage Class AB cascade | 2-stage linear driver amplifier |
| Frequency Range | 1800 MHz to 2200 MHz | 2300 MHz to 2700 MHz |
| Small-Signal Gain | 27.2 dB | 26 dB |
| Saturated Output Power (Psat) | 30.5 dBm (~1.1 W) | — |
| Versorgungsspannung | 5 V | 3 V to 5 V |
| Supply Current (Idq) | 70 mA typical | — |
| Gehäuse / Bauform | 12-QFN (3x3 mm) with Exposed Pad | — |
| Montageart | Surface Mount | Surface Mount |
| RF Input/Output Match | Internal 50 ohm | — |
| Supported RF Standards | LTE, PCS, TD-SCDMA, UMTS | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -40 °C to +85 °C |
| MSL-Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| RoHS-Status | Compliant (per NXP product page) | Compliant |
| Lead-Free | Yes | — |
| Packaging | Tape & Reel | — |
| Saturated Output Power | — | 31 dBm (typ) |
| Noise Figure | — | 3.8 dB at 2.5 GHz |
| Versorgungsstrom | — | 124 mA (typ) |
| Test Frequency | — | 2.5 GHz |
| Gehäuse | — | 12-VFQFN Exposed Pad (QFN-12 EP) |
| RF Type | — | WiMAX, WLAN |