MMBF170LT1 vs 2N7002L Comparison

Detailed side-by-side comparison of MMBF170LT1 by onsemi and 2N7002L by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter MMBF170LT1 2N7002L
Brand onsemi onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.09 $0.03
Manufacturer onsemi (ON Semiconductor) onsemi
Part Number MMBF170LT1 —
Transistor Type N-Channel MOSFET, Enhancement Mode N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDSS) 60 V —
Drain-Gate Voltage (VDGS) 60 Vdc —
Gate-Source Voltage - Continuous (VGS) ±20 Vdc (per datasheet) —
Gate-Source Voltage - Non-repetitive (VGSM) ±40 Vpk (tp <= 50 ms) —
Continuous Drain Current (ID) 500 mA (Ta) 115 mA (Ta)
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
Total Device Dissipation (PD) 225 mW (Ta, FR-5 board) —
Operating Temperature Range -55 °C to +150 °C (TJ max per datasheet) —
Package / Case SOT-23-3 (TO-236) —
Mounting Type Surface Mount Surface Mount
Pin Count 3 —
RoHS Status Compliant (per onsemi product page) [DATA_NEEDED: RoHS status]
AEC-Q101 Qualified Yes (per datasheet) —
Technology DMOS High cell density trench MOSFET
Polarity N-Channel —
Drain-Source Voltage (VDS) — 60 V
On-State Resistance (RDS(on)) — 7.5 ohm max at VGS = 5V
Gate-Source Voltage (VGS) — +/-20 V
Gate Threshold Voltage (VGS(th)) — 1 V to 2.5 V
Power Dissipation (PD) — 200 mW (Ta), 225 mW max
Package — SOT-23 (SOT-23-3)
Configuration — Single FET
Switching Performance — Fast switching, rugged and reliable
Gate Drive — 5V logic-level enhancement mode
Typical Applications — Low-side switching, servo motor control, gate driving, logic-level shifting

Datasheets & Resources

Browse All Products Create BOM Request Quote