MMBF170LT1 vs 2N7002L Comparación
Comparación detallada lado a lado de MMBF170LT1 por onsemi y 2N7002L por onsemi. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MMBF170LT1 | 2N7002L |
|---|---|---|
| Marca | onsemi | onsemi |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,09 | $0,03 |
| Manufacturer | onsemi (ON Semiconductor) | onsemi |
| Part Number | MMBF170LT1 | — |
| Tipo de transistor | N-Channel MOSFET, Enhancement Mode | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDSS) | 60 V | — |
| Drain-Gate Voltage (VDGS) | 60 Vdc | — |
| Gate-Source Voltage - Continuous (VGS) | ±20 Vdc (per datasheet) | — |
| Gate-Source Voltage - Non-repetitive (VGSM) | ±40 Vpk (tp <= 50 ms) | — |
| Continuous Drain Current (ID) | 500 mA (Ta) | 115 mA (Ta) |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| Total Device Dissipation (PD) | 225 mW (Ta, FR-5 board) | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C (TJ max per datasheet) | — |
| Encapsulado / Carcasa | SOT-23-3 (TO-236) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 | — |
| Estado RoHS | Compliant (per onsemi product page) | [DATA_NEEDED: RoHS status] |
| AEC-Q101 Qualified | Yes (per datasheet) | — |
| Technology | DMOS | High cell density trench MOSFET |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| On-State Resistance (RDS(on)) | — | 7.5 ohm max at VGS = 5V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1 V to 2.5 V |
| Power Dissipation (PD) | — | 200 mW (Ta), 225 mW max |
| Encapsulado | — | SOT-23 (SOT-23-3) |
| Configuration | — | Single FET |
| Switching Performance | — | Fast switching, rugged and reliable |
| Gate Drive | — | 5V logic-level enhancement mode |
| Typical Applications | — | Low-side switching, servo motor control, gate driving, logic-level shifting |