MMH3111NT1 vs MMG3007NT1 Comparison

Detailed side-by-side comparison of MMH3111NT1 by NXP Semiconductors and MMG3007NT1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MMH3111NT1 MMH3111NT1 - 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA | NXP

MMH3111NT1 - 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA | NXP

MMH3111NT1 ✓ Active
NXP Semiconductors
MMG3007NT1 MMG3007NT1 - 6 GHz, 19 dB Gain InGaP HBT GPA | NXP

MMG3007NT1 - 6 GHz, 19 dB Gain InGaP HBT GPA | NXP

MMG3007NT1 ✓ Active

Specification Comparison

Parameter MMH3111NT1 MMG3007NT1
Brand NXP Semiconductors NXP Semiconductors
Category RF Amplifiers RF Amplifiers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.60 $1.55
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale Semiconductor)
Part Description General Purpose Amplifier (GPA) RF Amplifier IC, General Purpose Amplifier (GPA), InGaP HBT
Process Technology GaAs Heterostructure FET (HFET) —
Frequency Range 250 MHz to 4000 MHz 0 Hz to 6000 MHz (DC to 6 GHz)
Typical Small-Signal Gain 12 dB —
Saturated Output Power (Psat) 22.5 dBm —
Operating Class Class A, small-signal, high linearity Class A, small-signal, general purpose
Input / Output Matching Internally prematched —
Package SOT-89-4 (3 leads + tab) SOT-89-4 (4-pin, plastic, surface mount)
Mounting Type Surface Mount Surface Mount
Supply Voltage 6 V nominal (per distributor listing) 5 V (typical, single supply)
Application Categories Cellular, PCS, ISM, WLL —
RoHS Status [DATA_NEEDED: RoHS status] Compliant (per NXP product page)
MSL Level [DATA_NEEDED: MSL rating] —
Operating Temperature [DATA_NEEDED: operating temperature range] —
Small-Signal Gain — 19 dB @ 900 MHz (typical)
P1dB Output Power — 16 dBm @ 900 MHz
Third-Order Output Intercept Point (OIP3) — 30 dBm @ 900 MHz
Technology — InGaP Heterojunction Bipolar Transistor (HBT)
Input Matching — Internally matched to 50 ohms
Output Matching — Internally matched to 50 ohms
Storage Temperature Range — [DATA_NEEDED: storage temperature range]
RF Input Power (max) — [DATA_NEEDED: maximum RF input power rating]
Tape and Reel Quantity — 1,000 units per reel, 12 mm tape width, 7-inch reel (T1 = 1k)

Datasheets & Resources

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