MMH3111NT1 vs MMG3007NT1 Comparação
Comparação detalhada lado a lado de MMH3111NT1 por NXP Semiconductors e MMG3007NT1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
NXP Semiconductors
MMH3111NT1 - 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA | NXP
MMH3111NT1 ✓ AtivoComparação de especificações
| Parâmetro | MMH3111NT1 | MMG3007NT1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | RF Amplifiers | RF Amplifiers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $2,60 | $1,55 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Description | General Purpose Amplifier (GPA) | RF Amplifier IC, General Purpose Amplifier (GPA), InGaP HBT |
| Process Technology | GaAs Heterostructure FET (HFET) | — |
| Frequency Range | 250 MHz to 4000 MHz | 0 Hz to 6000 MHz (DC to 6 GHz) |
| Typical Small-Signal Gain | 12 dB | — |
| Saturated Output Power (Psat) | 22.5 dBm | — |
| Operating Class | Class A, small-signal, high linearity | Class A, small-signal, general purpose |
| Input / Output Matching | Internally prematched | — |
| Encapsulamento | SOT-89-4 (3 leads + tab) | SOT-89-4 (4-pin, plastic, surface mount) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Tensão de alimentação | 6 V nominal (per distributor listing) | 5 V (typical, single supply) |
| Application Categories | Cellular, PCS, ISM, WLL | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant (per NXP product page) |
| Nível MSL | [DATA_NEEDED: MSL rating] | — |
| Temperatura de operação | [DATA_NEEDED: operating temperature range] | — |
| Small-Signal Gain | — | 19 dB @ 900 MHz (typical) |
| P1dB Output Power | — | 16 dBm @ 900 MHz |
| Third-Order Output Intercept Point (OIP3) | — | 30 dBm @ 900 MHz |
| Technology | — | InGaP Heterojunction Bipolar Transistor (HBT) |
| Input Matching | — | Internally matched to 50 ohms |
| Output Matching | — | Internally matched to 50 ohms |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| RF Input Power (max) | — | [DATA_NEEDED: maximum RF input power rating] |
| Tape and Reel Quantity | — | 1,000 units per reel, 12 mm tape width, 7-inch reel (T1 = 1k) |