MMH3111NT1 vs MMG3007NT1 Сравнение

Подробное сравнение бок о бок MMH3111NT1 от NXP Semiconductors и MMG3007NT1 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.

NXP Semiconductors
MMH3111NT1 MMH3111NT1 - 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA | NXP

MMH3111NT1 - 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA | NXP

MMH3111NT1 ✓ Активен
NXP Semiconductors
MMG3007NT1 MMG3007NT1 - 6 GHz, 19 dB Gain InGaP HBT GPA | NXP

MMG3007NT1 - 6 GHz, 19 dB Gain InGaP HBT GPA | NXP

MMG3007NT1 ✓ Активен

Сравнение характеристик

Параметр MMH3111NT1 MMG3007NT1
Бренд NXP Semiconductors NXP Semiconductors
Категория RF Amplifiers RF Amplifiers
Статус жизненного цикла Активен Активен
Наличие In Stock In Stock
Цена за единицу (USD) $2,60 $1,55
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale Semiconductor)
Part Description General Purpose Amplifier (GPA) RF Amplifier IC, General Purpose Amplifier (GPA), InGaP HBT
Process Technology GaAs Heterostructure FET (HFET) —
Frequency Range 250 MHz to 4000 MHz 0 Hz to 6000 MHz (DC to 6 GHz)
Typical Small-Signal Gain 12 dB —
Saturated Output Power (Psat) 22.5 dBm —
Operating Class Class A, small-signal, high linearity Class A, small-signal, general purpose
Input / Output Matching Internally prematched —
Корпус SOT-89-4 (3 leads + tab) SOT-89-4 (4-pin, plastic, surface mount)
Тип монтажа Surface Mount Surface Mount
Напряжение питания 6 V nominal (per distributor listing) 5 V (typical, single supply)
Application Categories Cellular, PCS, ISM, WLL —
Статус RoHS [DATA_NEEDED: RoHS status] Compliant (per NXP product page)
Уровень MSL [DATA_NEEDED: MSL rating] —
Рабочая температура [DATA_NEEDED: operating temperature range] —
Small-Signal Gain — 19 dB @ 900 MHz (typical)
P1dB Output Power — 16 dBm @ 900 MHz
Third-Order Output Intercept Point (OIP3) — 30 dBm @ 900 MHz
Technology — InGaP Heterojunction Bipolar Transistor (HBT)
Input Matching — Internally matched to 50 ohms
Output Matching — Internally matched to 50 ohms
Storage Temperature Range — [DATA_NEEDED: storage temperature range]
RF Input Power (max) — [DATA_NEEDED: maximum RF input power rating]
Tape and Reel Quantity — 1,000 units per reel, 12 mm tape width, 7-inch reel (T1 = 1k)

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