MMH3111NT1 vs MMG3007NT1 Comparaison
Comparaison détaillée côte à côte de MMH3111NT1 par NXP Semiconductors et MMG3007NT1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MMH3111NT1 - 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA | NXP
MMH3111NT1 ✓ ActifComparaison des spécifications
| Paramètre | MMH3111NT1 | MMG3007NT1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | RF Amplifiers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,60 | $1,55 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Description | General Purpose Amplifier (GPA) | RF Amplifier IC, General Purpose Amplifier (GPA), InGaP HBT |
| Process Technology | GaAs Heterostructure FET (HFET) | — |
| Frequency Range | 250 MHz to 4000 MHz | 0 Hz to 6000 MHz (DC to 6 GHz) |
| Typical Small-Signal Gain | 12 dB | — |
| Saturated Output Power (Psat) | 22.5 dBm | — |
| Operating Class | Class A, small-signal, high linearity | Class A, small-signal, general purpose |
| Input / Output Matching | Internally prematched | — |
| Boîtier | SOT-89-4 (3 leads + tab) | SOT-89-4 (4-pin, plastic, surface mount) |
| Type de montage | Surface Mount | Surface Mount |
| Tension d'alimentation | 6 V nominal (per distributor listing) | 5 V (typical, single supply) |
| Application Categories | Cellular, PCS, ISM, WLL | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | Compliant (per NXP product page) |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Small-Signal Gain | — | 19 dB @ 900 MHz (typical) |
| P1dB Output Power | — | 16 dBm @ 900 MHz |
| Third-Order Output Intercept Point (OIP3) | — | 30 dBm @ 900 MHz |
| Technology | — | InGaP Heterojunction Bipolar Transistor (HBT) |
| Input Matching | — | Internally matched to 50 ohms |
| Output Matching | — | Internally matched to 50 ohms |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| RF Input Power (max) | — | [DATA_NEEDED: maximum RF input power rating] |
| Tape and Reel Quantity | — | 1,000 units per reel, 12 mm tape width, 7-inch reel (T1 = 1k) |