MMH3111NT1 vs MMG3007NT1 Vergleich

Detaillierter Direktvergleich von MMH3111NT1 von NXP Semiconductors und MMG3007NT1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MMH3111NT1 MMH3111NT1 - 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA | NXP

MMH3111NT1 - 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA | NXP

MMH3111NT1 ✓ Aktiv
NXP Semiconductors
MMG3007NT1 MMG3007NT1 - 6 GHz, 19 dB Gain InGaP HBT GPA | NXP

MMG3007NT1 - 6 GHz, 19 dB Gain InGaP HBT GPA | NXP

MMG3007NT1 ✓ Aktiv

Spezifikationsvergleich

Parameter MMH3111NT1 MMG3007NT1
Marke NXP Semiconductors NXP Semiconductors
Kategorie RF Amplifiers RF Amplifiers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,60 $1,55
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale Semiconductor)
Part Description General Purpose Amplifier (GPA) RF Amplifier IC, General Purpose Amplifier (GPA), InGaP HBT
Process Technology GaAs Heterostructure FET (HFET) —
Frequency Range 250 MHz to 4000 MHz 0 Hz to 6000 MHz (DC to 6 GHz)
Typical Small-Signal Gain 12 dB —
Saturated Output Power (Psat) 22.5 dBm —
Operating Class Class A, small-signal, high linearity Class A, small-signal, general purpose
Input / Output Matching Internally prematched —
Gehäuse SOT-89-4 (3 leads + tab) SOT-89-4 (4-pin, plastic, surface mount)
Montageart Surface Mount Surface Mount
Versorgungsspannung 6 V nominal (per distributor listing) 5 V (typical, single supply)
Application Categories Cellular, PCS, ISM, WLL —
RoHS-Status [DATA_NEEDED: RoHS status] Compliant (per NXP product page)
MSL-Level [DATA_NEEDED: MSL rating] —
Betriebstemperatur [DATA_NEEDED: operating temperature range] —
Small-Signal Gain — 19 dB @ 900 MHz (typical)
P1dB Output Power — 16 dBm @ 900 MHz
Third-Order Output Intercept Point (OIP3) — 30 dBm @ 900 MHz
Technology — InGaP Heterojunction Bipolar Transistor (HBT)
Input Matching — Internally matched to 50 ohms
Output Matching — Internally matched to 50 ohms
Storage Temperature Range — [DATA_NEEDED: storage temperature range]
RF Input Power (max) — [DATA_NEEDED: maximum RF input power rating]
Tape and Reel Quantity — 1,000 units per reel, 12 mm tape width, 7-inch reel (T1 = 1k)

Datenblätter & Ressourcen

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