MPQ2222A vs MPQ2222 Comparison

Detailed side-by-side comparison of MPQ2222A by Central Semiconductor and MPQ2222 by Central Semiconductor. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Central Semiconductor
MPQ2222A

MPQ2222A - Quad NPN 40V 500mA Transistor Array | Central Semiconductor

MPQ2222A βœ“ Active
Central Semiconductor
MPQ2222

MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor

MPQ2222 βœ“ Active

Specification Comparison

Parameter MPQ2222A MPQ2222
Brand Central Semiconductor Central Semiconductor
Category Transistors Transistors
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.41 $0.39
Transistor Type Quad NPN General Purpose BJT Array β€”
Number of Transistors 4 (independent) β€”
Collector-Emitter Voltage (VCEO) 40 V β€”
Collector-Base Voltage (VCBO) 75 V [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet]
Emitter-Base Voltage (VEBO) 6.0 V [DATA_NEEDED: VEBO exact value]
Continuous Collector Current 500 mA β€”
Power Dissipation (total package) 650 mW 650 mW
Transition Frequency 200 MHz β€”
Package TO-116 (14-pin DIP, through hole) 14-pin DIP (TO-116), Through Hole
Mounting Type Through Hole Through Hole
Configuration General Purpose Amplifier / Switch Quad NPN Transistor Array (4 independent devices)
Base Technology Bipolar (BJT) β€”
Polarity NPN β€”
Lead-Free Yes (PBFREE) β€”
Operating and Storage Junction Temperature [DATA_NEEDED: Operating and Storage Junction Temperature] [DATA_NEEDED: exact TJ range from datasheet]
Thermal Resistance (total package) [DATA_NEEDED: Thermal Resistance (total package)] [DATA_NEEDED: thermal resistance value]
DC Current Gain (hFE) [DATA_NEEDED: DC Current Gain (hFE)] [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade]
Transistor Polarity β€” NPN Silicon
Collector-Emitter Voltage Rating β€” 40 V
Continuous Collector Current (per device) β€” 500 mA
Transition Frequency (fT) β€” 200 MHz
Power Dissipation (per transistor) β€” [DATA_NEEDED: per-transistor dissipation value]
Marking β€” Full part number
RoHS Status β€” Lead-free (PB Free suffix version available)

Datasheets & Resources

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