MPQ2222A vs MPQ2222 비교

다음의 상세 나란히 비교: MPQ2222A 제조: Central Semiconductor 및 MPQ2222 제조: Central Semiconductor. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 MPQ2222A MPQ2222
브랜드 Central Semiconductor Central Semiconductor
카테고리 Transistors Transistors
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.41 $0.39
트랜지스터 유형 Quad NPN General Purpose BJT Array —
Number of Transistors 4 (independent) —
컬렉터-이미터 전압 (Vceo) 40 V —
컬렉터-베이스 전압 (Vcbo) 75 V [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet]
이미터-베이스 전압 (Vebo) 6.0 V [DATA_NEEDED: VEBO exact value]
Continuous Collector Current 500 mA —
Power Dissipation (total package) 650 mW 650 mW
Transition Frequency 200 MHz —
패키지 TO-116 (14-pin DIP, through hole) 14-pin DIP (TO-116), Through Hole
실장 유형 Through Hole Through Hole
Configuration General Purpose Amplifier / Switch Quad NPN Transistor Array (4 independent devices)
Base Technology Bipolar (BJT) —
Polarity NPN —
Lead-Free Yes (PBFREE) —
Operating and Storage Junction Temperature [DATA_NEEDED: Operating and Storage Junction Temperature] [DATA_NEEDED: exact TJ range from datasheet]
Thermal Resistance (total package) [DATA_NEEDED: Thermal Resistance (total package)] [DATA_NEEDED: thermal resistance value]
DC Current Gain (hFE) [DATA_NEEDED: DC Current Gain (hFE)] [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade]
Transistor Polarity — NPN Silicon
Collector-Emitter Voltage Rating — 40 V
Continuous Collector Current (per device) — 500 mA
전이 주파수 (ft) — 200 MHz
Power Dissipation (per transistor) — [DATA_NEEDED: per-transistor dissipation value]
Marking — Full part number
RoHS 상태 — Lead-free (PB Free suffix version available)

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