MPQ2222A vs MPQ2222 Comparaison
Comparaison détaillée côte à côte de MPQ2222A par Central Semiconductor et MPQ2222 par Central Semiconductor. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Central Semiconductor
MPQ2222A - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222A ✓ ActifCentral Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ ActifComparaison des spécifications
| Paramètre | MPQ2222A | MPQ2222 |
|---|---|---|
| Marque | Central Semiconductor | Central Semiconductor |
| Catégorie | Transistors | Transistors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,41 | $0,39 |
| Type de transistor | Quad NPN General Purpose BJT Array | — |
| Number of Transistors | 4 (independent) | — |
| Tension collecteur-émetteur (Vceo) | 40 V | — |
| Tension collecteur-base (Vcbo) | 75 V | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] |
| Tension émetteur-base (Vebo) | 6.0 V | [DATA_NEEDED: VEBO exact value] |
| Continuous Collector Current | 500 mA | — |
| Power Dissipation (total package) | 650 mW | 650 mW |
| Transition Frequency | 200 MHz | — |
| Boîtier | TO-116 (14-pin DIP, through hole) | 14-pin DIP (TO-116), Through Hole |
| Type de montage | Through Hole | Through Hole |
| Configuration | General Purpose Amplifier / Switch | Quad NPN Transistor Array (4 independent devices) |
| Base Technology | Bipolar (BJT) | — |
| Polarity | NPN | — |
| Lead-Free | Yes (PBFREE) | — |
| Operating and Storage Junction Temperature | [DATA_NEEDED: Operating and Storage Junction Temperature] | [DATA_NEEDED: exact TJ range from datasheet] |
| Thermal Resistance (total package) | [DATA_NEEDED: Thermal Resistance (total package)] | [DATA_NEEDED: thermal resistance value] |
| DC Current Gain (hFE) | [DATA_NEEDED: DC Current Gain (hFE)] | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] |
| Transistor Polarity | — | NPN Silicon |
| Collector-Emitter Voltage Rating | — | 40 V |
| Continuous Collector Current (per device) | — | 500 mA |
| Fréquence de transition (ft) | — | 200 MHz |
| Power Dissipation (per transistor) | — | [DATA_NEEDED: per-transistor dissipation value] |
| Marking | — | Full part number |
| Statut RoHS | — | Lead-free (PB Free suffix version available) |