MPQ2222A vs MPQ2222 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MPQ2222A sa pamamagitan ng Central Semiconductor at MPQ2222 sa pamamagitan ng Central Semiconductor. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Central Semiconductor
MPQ2222A - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222A ✓ NakahandaCentral Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MPQ2222A | MPQ2222 |
|---|---|---|
| Brand | Central Semiconductor | Central Semiconductor |
| Kategorya | Transistors | Transistors |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | Quad NPN General Purpose BJT Array | — |
| Number of Transistors | 4 (independent) | — |
| Voltage ng Collector-Emitter (Vceo) | 40 V | — |
| Voltage ng Collector-Base (Vcbo) | 75 V | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] |
| Voltage ng Emitter-Base (Vebo) | 6.0 V | [DATA_NEEDED: VEBO exact value] |
| Continuous Collector Current | 500 mA | — |
| Power Dissipation (total package) | 650 mW | 650 mW |
| Transition Frequency | 200 MHz | — |
| Packhaging | TO-116 (14-pin DIP, through hole) | 14-pin DIP (TO-116), Through Hole |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Configuration | General Purpose Amplifier / Switch | Quad NPN Transistor Array (4 independent devices) |
| Base Technology | Bipolar (BJT) | — |
| Polarity | NPN | — |
| Lead-Free | Yes (PBFREE) | — |
| Operating and Storage Junction Temperature | [DATA_NEEDED: Operating and Storage Junction Temperature] | [DATA_NEEDED: exact TJ range from datasheet] |
| Thermal Resistance (total package) | [DATA_NEEDED: Thermal Resistance (total package)] | [DATA_NEEDED: thermal resistance value] |
| DC Current Gain (hFE) | [DATA_NEEDED: DC Current Gain (hFE)] | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] |
| Transistor Polarity | — | NPN Silicon |
| Collector-Emitter Voltage Rating | — | 40 V |
| Continuous Collector Current (per device) | — | 500 mA |
| Dalas ng Transisyon (ft) | — | 200 MHz |
| Power Dissipation (per transistor) | — | [DATA_NEEDED: per-transistor dissipation value] |
| Marking | — | Full part number |
| Tindminan RoHS | — | Lead-free (PB Free suffix version available) |