MRF6S19140HR3 vs MRF6S19140HR5 Comparison
Detailed side-by-side comparison of MRF6S19140HR3 by NXP Semiconductors and MRF6S19140HR5 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF6S19140HR3 - 29W LDMOS RF MOSFET 1.93-1.99GHz | NXP Semiconductors
MRF6S19140HR3 ObsoleteSpecification Comparison
| Parameter | MRF6S19140HR3 | MRF6S19140HR5 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | RF MOSFETs | MOSFETs |
| Lifecycle Status | Obsolete | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $25.20 | $82.40 |
| Transistor Type | LDMOS N-Channel Enhancement-Mode Lateral MOSFET | N-Channel RF Power LDMOS |
| Frequency Range | 1.93 GHz to 1.99 GHz (1930-1990 MHz) | — |
| Drain-Source Voltage (Max Rated) | 68 V | — |
| Test Drain Voltage (Vdd) | 28 V | — |
| Test Drain Current | 1.15 A | — |
| Power Output (Pout, Avg) | 29 W | — |
| Power Gain | 16 dB (typ) | — |
| Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| Package / Case | NI-880H-2L (CASE 465B-03, STYLE 1), ceramic with flange | NI-880H-2L ceramic flange |
| Pin Count | 3 | — |
| Mounting Type | Chassis / Stud-Mount (ceramic flange, bolt-down thermal) | Chassis / flange mount (bolt-down) |
| Application Class | Class AB, PCN/PCS base-station, TDMA/CDMA, multi-carrier | — |
| Operating Mode | CW / pulsed RF amplifier | — |
| Original Manufacturer | Freescale Semiconductor (now NXP) | — |
| Lead / Termination Finish | Gold-plated (per datasheet case drawing) | — |
| MSL | [DATA_NEEDED: MSL rating] | — |
| RoHS Status | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| HSL/R3 Suffix | R3 = 13" tape and reel | — |
| Datasheet Document | MRF6S19140H.pdf (NXP/Freescale) | — |
| Datasheet Length | 12 pages (per third-party datasheet index) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Drain-Source Voltage (Vdss) | — | 68 V (max) |
| Operating Drain Voltage (typical) | — | 28 V |
| Pulsed Drain Current (Id) | — | 1.15 A |
| Output Power (Pout) | — | 29 W (CW or pulsed) |
| Operating Frequency | — | 1.93 GHz to 1.99 GHz |
| Small-Signal Gain | — | 16 dB (typical) |
| Process Technology | — | HV6 LDMOS |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| Operating Temperature Range | — | [DATA_NEEDED: operating temp range] |
| Channel-to-Flange Thermal Resistance | — | 0.45 C/W (estimated, datasheet figure) |