MRF6S19140HR3 vs MRF6S19140HR5 比較
詳細な並列比較: MRF6S19140HR3 メーカー: NXP Semiconductors および MRF6S19140HR5 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
NXP Semiconductors
MRF6S19140HR3 - 29W LDMOS RF MOSFET 1.93-1.99GHz | NXP Semiconductors
MRF6S19140HR3 Obsolete仕様比較
| パラメータ | MRF6S19140HR3 | MRF6S19140HR5 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | RF MOSFETs | MOSFETs |
| ライフサイクル状態 | Obsolete | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $25.20 | $82.40 |
| トランジスタタイプ | LDMOS N-Channel Enhancement-Mode Lateral MOSFET | N-Channel RF Power LDMOS |
| Frequency Range | 1.93 GHz to 1.99 GHz (1930-1990 MHz) | — |
| Drain-Source Voltage (Max Rated) | 68 V | — |
| Test Drain Voltage (Vdd) | 28 V | — |
| Test Drain Current | 1.15 A | — |
| Power Output (Pout, Avg) | 29 W | — |
| Power Gain | 16 dB (typ) | — |
| 効率 | [DATA_NEEDED: drain efficiency %] | — |
| パッケージ / ケース | NI-880H-2L (CASE 465B-03, STYLE 1), ceramic with flange | NI-880H-2L ceramic flange |
| ピン数 | 3 | — |
| 実装タイプ | Chassis / Stud-Mount (ceramic flange, bolt-down thermal) | Chassis / flange mount (bolt-down) |
| Application Class | Class AB, PCN/PCS base-station, TDMA/CDMA, multi-carrier | — |
| Operating Mode | CW / pulsed RF amplifier | — |
| Original Manufacturer | Freescale Semiconductor (now NXP) | — |
| Lead / Termination Finish | Gold-plated (per datasheet case drawing) | — |
| MSL | [DATA_NEEDED: MSL rating] | — |
| RoHS ステータス | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| HSL/R3 Suffix | R3 = 13" tape and reel | — |
| Datasheet Document | MRF6S19140H.pdf (NXP/Freescale) | — |
| Datasheet Length | 12 pages (per third-party datasheet index) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Drain-Source Voltage (Vdss) | — | 68 V (max) |
| Operating Drain Voltage (typical) | — | 28 V |
| Pulsed Drain Current (Id) | — | 1.15 A |
| Output Power (Pout) | — | 29 W (CW or pulsed) |
| Operating Frequency | — | 1.93 GHz to 1.99 GHz |
| Small-Signal Gain | — | 16 dB (typical) |
| Process Technology | — | HV6 LDMOS |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| 動作温度範囲 | — | [DATA_NEEDED: operating temp range] |
| Channel-to-Flange Thermal Resistance | — | 0.45 C/W (estimated, datasheet figure) |