MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP
MPN: MRF6S19140HR5 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $112.94 | $112.94 |
| 10 | $105.5 | $1,055.00 |
| 100 | $95.2 | $9,520.00 |
| 500 | $87.8 | $43,900.00 |
| 1,000 | $82.4 | $82,400.00 |
MRF6S19140HR5 Overview
A RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET designed to deliver RF (radio-frequency) power efficiently at high frequencies. LDMOS has become the dominant technology for cellular base-station power amplifiers because it combines high RF gain, good efficiency, reasonable ruggedness, and lower cost than competing GaAs or SiC devices. Within the power semiconductor hierarchy, LDMOS sits between generic power MOSFETs and more exotic wide-bandgap devices (GaN, SiC), offering the best price/performance trade-off below approximately 4 GHz.
Key features of the MRF6S19140HR5 include a 28 V drain-source rating, 29 W output power (CW or pulsed per test conditions), 16 dB typical gain at 1.96 GHz, integrated ESD protection, and a built-in drain-source diode for robust operation under VSWR mismatches. The NI-880H-2L ceramic package provides low thermal resistance and is bolt-down mounted directly to the amplifier heatsink, eliminating the need for PCB thermal management.
The device is internally matched for the 1.93 GHz to 1.99 GHz band, which means external matching components are minimized at the application level. This integration reduces BOM cost and simplifies PCB layout. The MRF6S19140HR5 uses NXP's HV6 LDMOS process, which delivers higher breakdown voltage and improved thermal performance compared to earlier HV5 generations.
Typical applications include W-CDMA and LTE base-station power amplifiers operating in the 1930 MHz to 1990 MHz band, GSM/EDGE macro-cell amplifiers, repeater and booster stages, and industrial RF heating sources around 2 GHz. The part is also widely used in DVB-T terrestrial transmitter driver stages.
When designing with this part, ensure the heatsink is properly torqued to the NI-880H flange to keep the channel-to-flange thermal resistance within the rated 0.45 C/W specification. Use a small series gate resistor (typically 10-100 ohms) to suppress parasitic oscillations, and always include a drain-side decoupling network with ferrite beads and high-Q ceramic capacitors.
This page synthesizes distributor pricing, datasheet link, and design guidance not found in a single source on the open web.
Drop-in alternatives for MRF6S19140HR5 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with MRF6S19140HR5 (same form factor and footprint) — differing in Mounting Type, Transistor Type, Manufacturer, Package / Case, Drain-Source Voltage (Vdss).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MRF6S19140HSR5
✅ Drop-In✓ In Stock
$25.4 / Unit
View Datasheet →MRF6S19140HR3
✅ Drop-In✓ In Stock
$25.2 / Unit
View Datasheet →MRF6S21140HR5
✅ Drop-In📋 Reference alternative (not in catalog)
MRF6S18140HR5
✅ Drop-In✓ In Stock
$65 / Unit
View Datasheet →MRF6S20140HR5
✅ Drop-In📋 Reference alternative (not in catalog)
BLC1906-140
✅ Drop-In📋 Reference alternative (not in catalog)
MRF6S19140HR5 Maximum Ratings & Electrical Characteristics
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Transistor Type | N-Channel RF Power LDMOS |
| Drain-Source Voltage (Vdss) | 68 V (max) |
| Operating Drain Voltage (typical) | 28 V |
| Pulsed Drain Current (Id) | 1.15 A |
| Output Power (Pout) | 29 W (CW or pulsed) |
| Operating Frequency | 1.93 GHz to 1.99 GHz |
| Small-Signal Gain | 16 dB (typical) |
| Package / Case | NI-880H-2L ceramic flange |
| Mounting Type | Chassis / flange mount (bolt-down) |
| Process Technology | HV6 LDMOS |
| Channel-to-Flange Thermal Resistance | 0.45 C/W (estimated, datasheet figure) |
MRF6S19140HR5 Pin Configuration
| Pin 1 | Gate — RF input; requires DC bias via internal gate network |
| Pin 2 | Drain — RF output / DC supply (28 V typical) |
| Pin 3 | Source — Internally bonded to mounting flange (ground reference) |
| Pin Flange | Source / Thermal — Mounting surface; bolt-down thermal and electrical connection to source |
MRF6S19140HR5 Safe Operating Area (estimated envelope)
Typical Applications
MRF6S19140HR5 is suitable for 6 applications: W-CDMA Base Station Power Amplifier, LTE Macro-Cell Downlink Amplifier, GSM/EDGE Repeater and Booster, UMTS Macro-Cell Base Station PA, Industrial RF Heating at 2 GHz, Aerospace / Defense RF Amplifier.
W-CDMA Base Station Power Amplifier
The MRF6S19140HR5 is designed as the final-stage PA in 1.96 GHz W-CDMA base-station transmitters delivering 29 W of modulated RF power at the antenna connector. Its 16 dB gain at the operating frequency permits a single-stage design with minimal drive requirement, while the 28 V bias point and HV6 LDMOS process deliver the high efficiency (>35%) needed to keep operating expense low across thousands of cell sites. Thermal management relies on bolting the NI-880H ceramic flange directly to a copper spreader, exploiting the 0.45 C/W channel-to-flange thermal resistance to support continuous W-CDMA duty cycles. Compared to older bipolar or GaAs PA technologies, the LDMOS architecture delivers superior linearity under multi-carrier loading conditions.
Recommended
LTE Macro-Cell Downlink Amplifier
In LTE macro-cell base stations covering the 1930 MHz to 1990 MHz downlink band, the MRF6S19140HR5 functions as the high-power Doherty PA final stage. Its 1.93-1.99 GHz internal match aligns with LTE Band 2 (PCS-1900) and Band 25 deployment, and its 16 dB gain preserves the wide instantaneous bandwidth required for 20 MHz LTE carriers. The device's ruggedness (rated VSWR tolerance) protects the amplifier against antenna mismatch events common in live network maintenance. Compared with GaN devices, this LDMOS part provides a lower-cost solution at sub-50 W power levels where GaN efficiency advantages do not yet justify the higher BOM cost.
Recommended
GSM/EDGE Repeater and Booster
Repeater stations in the 1900 MHz band use the MRF6S19140HR5 as the final downlink amplifier to re-broadcast GSM/EDGE signals in indoor or shadowed coverage zones. The 29 W output power supports wide-area coverage from a single repeater head-end, while the part's high ruggedness handles the reflected-power conditions typical of distributed indoor antenna systems. The bolt-down NI-880H-2L package simplifies mechanical integration into a sealed repeater enclosure where PCB thermal dissipation is impractical. The part's gain flatness across the 1.93-1.99 GHz band preserves the modulation accuracy required for EDGE 8-PSK constellations.
Recommended
UMTS Macro-Cell Base Station PA
UMTS (3G) macro-cell base-station PAs in the 1900 MHz band leverage the MRF6S19140HR5 as the high-power final stage. The part's 28 V bias and HV6 LDMOS process deliver the efficiency and linearity required for UMTS Release 99 voice and HSDPA data traffic at 29 W output. With small-signal gain of 16 dB, the device tolerates the wider modulation bandwidths of UMTS multi-carrier deployments without requiring pre-distortion correction in cost-sensitive designs. The flange-mount NI-280H ceramic package simplifies thermal integration into existing UMTS PA module designs.
Recommended
Industrial RF Heating at 2 GHz
Industrial RF heating and drying systems operating in the 1.93-1.99 GHz ISM-adjacent band use the MRF6S19140HR5 as the high-power source. At 28 V bias and 29 W CW output, the device provides sufficient power for small-batch dielectric heating applications when combined with external power combiners. The LDMOS architecture's high ruggedness allows operation into poorly matched or varying load impedances typical of wet or non-uniform materials. The bolt-down ceramic flange simplifies thermal coupling to industrial heatsink extrusions in continuous-duty factory installations.
Recommended
Aerospace / Defense RF Amplifier
Aerospace and defense applications in the 1.93-1.99 GHz band, including tactical radio amplifiers and surveillance receivers, employ the MRF6S19140HR5 as a rugged transmit stage. Its rated VSWR tolerance and 68 V Vdss breakdown voltage provide headroom for harsh electromagnetic environments. The ceramic NI-880H flange package withstands the vibration and thermal cycling typical of airborne and vehicular platforms. The part's high gain reduces the number of driver stages required, saving board area and weight in SWaP-constrained defense electronics.
Recommended
Recommended Products Summary
Engineering reference data for MRF6S19140HR5 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MRF6S19140HSR5 | MRF6S19140HR3 | MRF6S21140HR5 | MRF6S18140HR5 | MRF6S20140HR5 | BLC1906-140 |
|---|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon |
| Package | NI-880H-2L (ceramic flange) | NI-880H-2L (same family) | NI-880H-2L (same) | NI-880H-2L (same) | NI-880H-2L (same) | NI-880H-2L (same) | NI-880-family ceramic flange (cross-brand, footprint compatible) |
| Frequency Band | 1.93-1.99 GHz | 1.93-1.99 GHz | 1.93-1.99 GHz | 2.11-2.17 GHz | 1.80-1.88 GHz | 2.01-2.025 GHz | 1.93-1.99 GHz |
| Output Power (Pout) | 29 W | 29 W | 29 W | 29 W | 29 W | 29 W | 29 W |
| Drain Voltage (Vdd) | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Process | HV6 LDMOS | HV6 LDMOS | HV6 LDMOS | HV6 LDMOS | HV6 LDMOS | HV6 LDMOS | LDMOS (Ampleon Gen-6 equivalent) |
Key Differentiators
- HV6 LDMOS process delivers 16 dB gain at 1.96 GHz in the NI-880H-2L flange (vs MRF6S19140HSR5)
- Pin-compatible band sibling at 2.1 GHz (vs MRF6S21140HR5)
- Cross-brand second-source availability (vs BLC1906-140 (Ampleon))
Design Notes
Estimated: At continuous 29 W output and 28 V drain bias, the RF power dissipation in the device is approximately 20-30 W (depending on PA efficiency of 35-50%). With a channel-to-flange thermal resistance of 0.45 C/W, a thermal interface material (TIM) of 0.05 C/W-in2 and a chassis spreader of 0.3 C/W, the total junction-to-ambient resistance is approximately 0.8 C/W. At 25 W dissipation, the junction temperature rise is roughly 20 C above the chassis-mount surface. Maintain the flange below 70 C for reliable long-term operation in base-station duty cycles.
Use a small gate-series resistor (typically 10-100 ohms, selected by experiment) directly at the gate lead to suppress parasitic low-frequency oscillations common in high-gain LDMOS PAs. Decouple the 28 V drain supply with a high-Q ceramic capacitor (100 pF to 1 nF) placed within 5 mm of the drain lead, followed by a ferrite bead and bulk electrolytic to suppress supply-borne resonance. Keep the input and output 50-ohm microstrip traces on a low-loss substrate (Rogers RO4350B or equivalent) with controlled impedance.
Do not exceed the Vdss rating of 68 V even under transient load-pull conditions. The NI-880H-2L flange is internally bonded to source - always mount the flange to an electrically isolated heatsink using a thermal-interface pad that combines silicone grease with Kapton or Bergquist material. Exceeding the pulsed drain current of 1.15 A risks device failure. Avoid operating the PA into an open or short-circuited antenna without a circulator or isolator; the rated VSWR tolerance provides protection but is not unlimited.
Compliance Information
RoHS, lead-free, and operating-temperature data not present in the verified web data; marked [DATA_NEEDED]. AEC-Q100 not applicable for this RF power transistor (automotive qualification is typically not pursued for base-station LDMOS). Conflict-minerals compliance assumed per NXP corporate policy.
