MRF6S19140HR3 vs MRF6S19140HR5 Сравнение
Подробное сравнение бок о бок MRF6S19140HR3 от NXP Semiconductors и MRF6S19140HR5 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF6S19140HR3 - 29W LDMOS RF MOSFET 1.93-1.99GHz | NXP Semiconductors
MRF6S19140HR3 ObsoleteСравнение характеристик
| Параметр | MRF6S19140HR3 | MRF6S19140HR5 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | RF MOSFETs | MOSFETs |
| Статус жизненного цикла | Obsolete | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $25,20 | $82,40 |
| Тип транзистора | LDMOS N-Channel Enhancement-Mode Lateral MOSFET | N-Channel RF Power LDMOS |
| Frequency Range | 1.93 GHz to 1.99 GHz (1930-1990 MHz) | — |
| Drain-Source Voltage (Max Rated) | 68 V | — |
| Test Drain Voltage (Vdd) | 28 V | — |
| Test Drain Current | 1.15 A | — |
| Power Output (Pout, Avg) | 29 W | — |
| Power Gain | 16 dB (typ) | — |
| КПД | [DATA_NEEDED: drain efficiency %] | — |
| Корпус / Типоразмер | NI-880H-2L (CASE 465B-03, STYLE 1), ceramic with flange | NI-880H-2L ceramic flange |
| Число выводов | 3 | — |
| Тип монтажа | Chassis / Stud-Mount (ceramic flange, bolt-down thermal) | Chassis / flange mount (bolt-down) |
| Application Class | Class AB, PCN/PCS base-station, TDMA/CDMA, multi-carrier | — |
| Operating Mode | CW / pulsed RF amplifier | — |
| Original Manufacturer | Freescale Semiconductor (now NXP) | — |
| Lead / Termination Finish | Gold-plated (per datasheet case drawing) | — |
| MSL | [DATA_NEEDED: MSL rating] | — |
| Статус RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| HSL/R3 Suffix | R3 = 13" tape and reel | — |
| Datasheet Document | MRF6S19140H.pdf (NXP/Freescale) | — |
| Datasheet Length | 12 pages (per third-party datasheet index) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Drain-Source Voltage (Vdss) | — | 68 V (max) |
| Operating Drain Voltage (typical) | — | 28 V |
| Pulsed Drain Current (Id) | — | 1.15 A |
| Output Power (Pout) | — | 29 W (CW or pulsed) |
| Operating Frequency | — | 1.93 GHz to 1.99 GHz |
| Small-Signal Gain | — | 16 dB (typical) |
| Process Technology | — | HV6 LDMOS |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| Диапазон рабочих температур | — | [DATA_NEEDED: operating temp range] |
| Channel-to-Flange Thermal Resistance | — | 0.45 C/W (estimated, datasheet figure) |