MRF6S19140HSR5 vs MRF6S19140HR5 Comparison
Detailed side-by-side comparison of MRF6S19140HSR5 by NXP Semiconductors and MRF6S19140HR5 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP
MRF6S19140HSR5 ✓ Active
Specification Comparison
| Parameter | MRF6S19140HSR5 | MRF6S19140HR5 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $25.40 | $82.40 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Original Manufacturer | Freescale Semiconductor | — |
| Part Status | Active | — |
| Transistor Type | RF Power LDMOS (N-Channel) | N-Channel RF Power LDMOS |
| Drain-Source Voltage (Vdss) | 68 V | 68 V (max) |
| Operating Drain Voltage (typical) | 28 V | 28 V |
| Drain Current (Id) | 1.15 A | — |
| Frequency Range | 1.93 GHz to 1.99 GHz | — |
| Output Power (Pout) | 29 W | 29 W (CW or pulsed) |
| Power Gain (Gps) | 16 dB | — |
| Test Condition | Two-tone W-CDMA, 1.96 GHz | — |
| Package / Case | NI-880S | NI-880H-2L ceramic flange |
| Mounting Type | Chassis Mount / Screw Clamp | Chassis / flange mount (bolt-down) |
| Operating Temperature | -40 C to +150 C (junction) | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| ESD Protection | Yes (integrated) | — |
| Technology | HV6 LDMOS (later branded NXP HV6) | — |
| Pulsed Drain Current (Id) | — | 1.15 A |
| Operating Frequency | — | 1.93 GHz to 1.99 GHz |
| Small-Signal Gain | — | 16 dB (typical) |
| Process Technology | — | HV6 LDMOS |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| Operating Temperature Range | — | [DATA_NEEDED: operating temp range] |
| Channel-to-Flange Thermal Resistance | — | 0.45 C/W (estimated, datasheet figure) |