MRF6S19140HSR5 vs MRF6S19140HR5 Сравнение
Подробное сравнение бок о бок MRF6S19140HSR5 от NXP Semiconductors и MRF6S19140HR5 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP
MRF6S19140HSR5 ✓ Активен
Сравнение характеристик
| Параметр | MRF6S19140HSR5 | MRF6S19140HR5 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $25,40 | $82,40 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Original Manufacturer | Freescale Semiconductor | — |
| Part Status | Active | — |
| Тип транзистора | RF Power LDMOS (N-Channel) | N-Channel RF Power LDMOS |
| Drain-Source Voltage (Vdss) | 68 V | 68 V (max) |
| Operating Drain Voltage (typical) | 28 V | 28 V |
| Drain Current (Id) | 1.15 A | — |
| Frequency Range | 1.93 GHz to 1.99 GHz | — |
| Output Power (Pout) | 29 W | 29 W (CW or pulsed) |
| Power Gain (Gps) | 16 dB | — |
| Test Condition | Two-tone W-CDMA, 1.96 GHz | — |
| Корпус / Типоразмер | NI-880S | NI-880H-2L ceramic flange |
| Тип монтажа | Chassis Mount / Screw Clamp | Chassis / flange mount (bolt-down) |
| Рабочая температура | -40 C to +150 C (junction) | — |
| Статус RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| ESD Protection | Yes (integrated) | — |
| Technology | HV6 LDMOS (later branded NXP HV6) | — |
| Pulsed Drain Current (Id) | — | 1.15 A |
| Operating Frequency | — | 1.93 GHz to 1.99 GHz |
| Small-Signal Gain | — | 16 dB (typical) |
| Process Technology | — | HV6 LDMOS |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| Диапазон рабочих температур | — | [DATA_NEEDED: operating temp range] |
| Channel-to-Flange Thermal Resistance | — | 0.45 C/W (estimated, datasheet figure) |