MRF6S19140HSR5 vs MRF6S19140HR5 비교

다음의 상세 나란히 비교: MRF6S19140HSR5 제조: NXP Semiconductors 및 MRF6S19140HR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF6S19140HSR5 MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP

MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP

MRF6S19140HSR5 ✓ 활성
NXP Semiconductors
MRF6S19140HR5 MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP

MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP

MRF6S19140HR5 ✓ 활성

사양 비교

파라미터 MRF6S19140HSR5 MRF6S19140HR5
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $25.40 $82.40
Manufacturer NXP Semiconductors NXP Semiconductors (formerly Freescale)
Original Manufacturer Freescale Semiconductor —
Part Status Active —
트랜지스터 유형 RF Power LDMOS (N-Channel) N-Channel RF Power LDMOS
Drain-Source Voltage (Vdss) 68 V 68 V (max)
Operating Drain Voltage (typical) 28 V 28 V
Drain Current (Id) 1.15 A —
Frequency Range 1.93 GHz to 1.99 GHz —
Output Power (Pout) 29 W 29 W (CW or pulsed)
Power Gain (Gps) 16 dB —
Test Condition Two-tone W-CDMA, 1.96 GHz —
패키지 / 케이스 NI-880S NI-880H-2L ceramic flange
실장 유형 Chassis Mount / Screw Clamp Chassis / flange mount (bolt-down)
동작 온도 -40 C to +150 C (junction) —
RoHS 상태 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
ESD Protection Yes (integrated) —
Technology HV6 LDMOS (later branded NXP HV6) —
Pulsed Drain Current (Id) — 1.15 A
Operating Frequency — 1.93 GHz to 1.99 GHz
Small-Signal Gain — 16 dB (typical)
Process Technology — HV6 LDMOS
Lead-Free — [DATA_NEEDED: lead-free status]
동작 온도 범위 — [DATA_NEEDED: operating temp range]
Channel-to-Flange Thermal Resistance — 0.45 C/W (estimated, datasheet figure)

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