MRF6S19140HSR5 vs MRF6S19140HR5 对比

详细并排对比 MRF6S19140HSR5 出自 NXP Semiconductors 和 MRF6S19140HR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF6S19140HSR5 MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP

MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP

MRF6S19140HSR5 ✓ 量产中
NXP Semiconductors
MRF6S19140HR5 MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP

MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP

MRF6S19140HR5 ✓ 量产中

规格对比

参数 MRF6S19140HSR5 MRF6S19140HR5
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $25.40 $82.40
Manufacturer NXP Semiconductors NXP Semiconductors (formerly Freescale)
Original Manufacturer Freescale Semiconductor —
Part Status Active —
晶体管类型 RF Power LDMOS (N-Channel) N-Channel RF Power LDMOS
Drain-Source Voltage (Vdss) 68 V 68 V (max)
Operating Drain Voltage (typical) 28 V 28 V
Drain Current (Id) 1.15 A —
Frequency Range 1.93 GHz to 1.99 GHz —
Output Power (Pout) 29 W 29 W (CW or pulsed)
Power Gain (Gps) 16 dB —
Test Condition Two-tone W-CDMA, 1.96 GHz —
封装 / 外壳 NI-880S NI-880H-2L ceramic flange
安装类型 Chassis Mount / Screw Clamp Chassis / flange mount (bolt-down)
工作温度 -40 C to +150 C (junction) —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
ESD Protection Yes (integrated) —
Technology HV6 LDMOS (later branded NXP HV6) —
Pulsed Drain Current (Id) — 1.15 A
Operating Frequency — 1.93 GHz to 1.99 GHz
Small-Signal Gain — 16 dB (typical)
Process Technology — HV6 LDMOS
Lead-Free — [DATA_NEEDED: lead-free status]
工作温度范围 — [DATA_NEEDED: operating temp range]
Channel-to-Flange Thermal Resistance — 0.45 C/W (estimated, datasheet figure)

数据手册与资源

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