MRF6S19200HR5 vs MRFE6S9160HR3 Comparison
Detailed side-by-side comparison of MRF6S19200HR5 by NXP Semiconductors and MRFE6S9160HR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MRF6S19200HR5 | MRFE6S9160HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $89.75 | $25.20 |
| Transistor Type | LDMOS | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power MOSFET | HV6E lateral MOSFET (LDMOS-like) |
| Drain-Source Voltage (Vds) Max | 66 V | — |
| Test Voltage (Vds) | 28 V | — |
| Test Current (Ids) | 1.6 A | — |
| Frequency Range | 1.93 GHz to 1.99 GHz | — |
| Power Gain (Typ) | 17.9 dB | — |
| Output Power (Pout) | 56 W (CW) | — |
| Package | NI-780H-2L (ceramic flange) | — |
| Mounting Type | Flange / Screw Mount | Chassis / Flange mount (through-hole RF leads) |
| Operating Mode | Class AB, Class C | — |
| Application | CDMA base station, multicarrier amplifiers | — |
| Input Matching | Internal (broadband) | — |
| Lead Free Status | Yes | — |
| RoHS Status | Compliant | Compliant |
| Manufacturer | — | NXP Semiconductors |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Test Frequency | — | 880 MHz |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| Drain Efficiency | — | 32.4% (typical, N-CDMA, 880 MHz) |
| Package / Case | — | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| Operating Temperature Range | — | -40C to +150C (junction) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| Lead-Free | — | Yes |
| MSL Level | — | Not applicable (non-SMD air-cavity package) |