MRF6S19200HR5 vs MRFE6S9160HR3 Comparação

Comparação detalhada lado a lado de MRF6S19200HR5 por NXP Semiconductors e MRFE6S9160HR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF6S19200HR5 MRF6S19200HR5 - 56W RF Power LDMOS 1.93-1.99GHz | NXP

MRF6S19200HR5 - 56W RF Power LDMOS 1.93-1.99GHz | NXP

MRF6S19200HR5 ✓ Ativo
NXP Semiconductors
MRFE6S9160HR3 MRFE6S9160HR3 - 35W, 880MHz RF Power MOSFET | NXP

MRFE6S9160HR3 - 35W, 880MHz RF Power MOSFET | NXP

MRFE6S9160HR3 ✓ Ativo

Comparação de especificações

Parâmetro MRF6S19200HR5 MRFE6S9160HR3
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $89,75 $25,20
Tipo de transistor LDMOS N-Channel Enhancement-Mode Lateral MOSFET
Technology RF Power MOSFET HV6E lateral MOSFET (LDMOS-like)
Drain-Source Voltage (Vds) Max 66 V —
Test Voltage (Vds) 28 V —
Test Current (Ids) 1.6 A —
Frequency Range 1.93 GHz to 1.99 GHz —
Power Gain (Typ) 17.9 dB —
Output Power (Pout) 56 W (CW) —
Encapsulamento NI-780H-2L (ceramic flange) —
Tipo de montagem Flange / Screw Mount Chassis / Flange mount (through-hole RF leads)
Operating Mode Class AB, Class C —
Application CDMA base station, multicarrier amplifiers —
Input Matching Internal (broadband) —
Lead Free Status Yes —
Status RoHS Compliant Compliant
Manufacturer — NXP Semiconductors
Drain-Source Voltage (V DSS) — 70 V (max)
Drain Current (continuous) — [DATA_NEEDED: typical drain current at TC=25C]
Operating Frequency Range — 865 MHz to 960 MHz
Test Frequency — 880 MHz
Drain Supply Voltage (V DD) — 28 V (typical)
Output Power (Average) — 35 W (single-carrier N-CDMA, 880 MHz)
Output Power (PEP) — [DATA_NEEDED: PEP at specified conditions]
Power Gain (G ps / G p) — 21 dB (typical at 880 MHz)
Drain Efficiency — 32.4% (typical, N-CDMA, 880 MHz)
Encapsulamento / Caixa — NI-780H-2L (ceramic/metal air-cavity flange-mount)
Faixa de temperatura de operação — -40C to +150C (junction)
Storage Temperature — [DATA_NEEDED: storage temperature]
Thermal Resistance (R thJC) — [DATA_NEEDED: thermal resistance junction-to-case]
Input Match — Internally matched input (broadband)
Lead-Free — Yes
Nível MSL — Not applicable (non-SMD air-cavity package)

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