MRF6S21100HR3 vs MRFG35010NT1 Comparison

Detailed side-by-side comparison of MRF6S21100HR3 by NXP Semiconductors and MRFG35010NT1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF6S21100HR3 MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 ✓ Active
NXP Semiconductors
MRFG35010NT1 MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 Obsolete

Specification Comparison

Parameter MRF6S21100HR3 MRFG35010NT1
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Obsolete
Stock Status In Stock In Stock
Unit Price (USD) $38.95 $25.95
Transistor Type LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) GaAs pHEMT RF Power FET
Configuration Single Unmatched, common source
Frequency Band 2.11 GHz to 2.17 GHz —
Output Power (Average) 23 W (W-CDMA, CW equivalent ~100 W PEP) —
Power Gain (Typ) 15.9 dB at 2.14 GHz —
Drain-Source Voltage Rating (VDS max) 68 V —
Test Supply Voltage (VDD) 28 V —
Quiescent Drain Current (IDQ) 950 mA —
Test Drain Current 950 mA —
Package NI-780H-2L (ceramic flange) —
Mounting Type Surface Mount / bolt-down flange Chassis-mount / flange-bolt
Maximum Power Dissipation (Abs) 388 W —
Operating Mode Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) —
Terminal Position Dual —
Lead Free Status [DATA_NEEDED: RoHS/lead-free explicit statement] Lead free (per datasheet)
RoHS Status [DATA_NEEDED: explicit RoHS compliance statement] [DATA_NEEDED: RoHS status]
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Part Number — MRFG35010NT1
Drain-Source Voltage Rating (Vds) — 15 V
Continuous Drain Current Rating — 2.9 A
Operating Frequency — 3.55 GHz
Frequency Range — 1.8 GHz to 3.6 GHz
Test Voltage — 12 V
Test Current (quiescent) — 180 mA
Associated Power Gain — 10 dB at 3.55 GHz
Output Power — 9 W at 3.55 GHz
Class of Operation — Class AB linear
Package / Case — PLD-1.5 flanged ceramic
Supplier Device Package — PLD-1.5

Datasheets & Resources

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